2022
DOI: 10.1063/5.0098750
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Electrochemical-tunable and mesostructure-dependent abrupt-to-progressive conversion in fibroin-based transient memristor

Abstract: The unique degradability and excellent biocompatibility make silk fibroin an attractive material for flexible transient memristors. Materials functionalization from the mesoscopic reconstruction view is a promising route to expand functions and create new types of electronic devices. Here, the transformation of the abrupt-to-progressive switching behavior in fibroin-based memristors is achieved via annealing to adjust the mesoscopic structure. Through electrical test and scanning electron microscope analysis, … Show more

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Cited by 7 publications
(3 citation statements)
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“…The RS performance based on conductive filaments (CFs) represents one of the important memristor mechanisms [66][67][68][69][70], as shown in figure 2(a). Two-dimensional materials have been reported to exhibit phase transition and TS behavior.…”
Section: Materials and Mechanismmentioning
confidence: 99%
“…The RS performance based on conductive filaments (CFs) represents one of the important memristor mechanisms [66][67][68][69][70], as shown in figure 2(a). Two-dimensional materials have been reported to exhibit phase transition and TS behavior.…”
Section: Materials and Mechanismmentioning
confidence: 99%
“…[17] Nonetheless, it is worth noting that these devices are less suitable for biomedical applications due to their higher power consumption and lack of biocompatibility. Currently, protein-based biomaterials like egg albumin, [18,19] keratin, [20,21] bovine milk, [22] casein, [23] silk fibroin, [24,25] chitosan, [26][27][28] starch, [29,30] fish protein, [31] gelatin, etc. have been used to create biocompatible artificial synaptic devices.…”
Section: Introductionmentioning
confidence: 99%
“…The device exhibits a high switching ratio of up to 10 4 , which is significantly higher than those of other state-of-the-art devices. The ITO top electrode is chosen for its excellent conductivity and light transmission properties, while Pt is selected as the bottom electrode due to its outstanding conductivity and stability. Further investigations reveal that the coupling of oxygen vacancies, optical fields, and electric fields induces the resistive switching behavior of the device. We further prepare the device as a crossbar structure and demonstrate its image recognition, image preprocessing (such as noise reduction and contrast enhancement), image memory, and image erasure functions. Unlike conventional optical sensors, our device senses external signals in a neural signal-like manner and exhibits outfield-dependent plasticity. ,, Our work opens a new avenue for developing next-generation nonvolatile memories and artificial vision systems.…”
mentioning
confidence: 99%