Electrochemically triggered degradation of silicon membranes for smart on-demand transient electronic devices

Abstract

Transient electronics is an emerging technology that enables unique functional transformation or the physical disappearance of electronic devices, and is attracting increasing attention for potential applications in data secured hardware as an ultimate solution against data breaches. Developing smart triggered degradation modalities of silicon (Si) remain the key challenge to achieve advanced non-recoverable on-demand transient electronics. Here, we present a novel electrochemically triggered transience mechanism of Si by lithiation, allowing complete and controllable destruction of Si devices. The depth and microstructure of the lithiation-affected zone over time is investigated in detail and the results suggest a few hours of lithiation is sufficient to create microcracks and significantly promote lithium penetration. Finite element models are proposed to confirm the mechanism. Electrochemically triggered degradation of thin film Si ribbons and Si integrated circuit chips with metal-oxide-semiconductor field-effect transistors from a commercial 0.35 micrometer complementary metal-oxide-semiconductor technology node is performed to demonstrate the potential applications for commercial electronics. This work opens new opportunities for versatile triggered transience of Si-based devices for critical secured information systems and green consumer electronics.

Pathway of transient electronics towards connected biomedical applications

“…However, accelerating the dissolution of Si nanomembranes for fast transient Si circuits is a challenge. With the application of a constant current density of 400 μA cm −2 in the galvanostatic mode using a metal–oxide–semiconductor field-effect transistor (MOSFET), lithiation was performed to provide the fast yet controllable on-demand disintegration of Si 57 (Fig. 2a-i).…”

Advances in Physicochemically Stimuli-Responsive Materials for On-Demand Transient Electronic Systems

“…An alternative strategy for electrically triggered systems that avoids this limitation is based on the lithiation of Si. 72 Figure 6C (bottom, left) illustrates the mechanism. Lithium electrochemically inserts into the Si through a galvanostatic mode at a constant current density.…”

Design, Simulation, and Experimental Verification of a Destruction Mechanism of Transient Electronic Devices

“…Pandey [35] mixes gasoline, benzene, polystyrene, and CuO/Al nanoparticles to form a napalm film and assembles it onto a chip. e chip melts by burning the napalm for about 10 s. Chen et al [36] present an electrochemically triggered transience mechanism of Si by lithiation, allowing complete and controllable destruction of Si devices, which can lead to both physical disintegration and chemical modification of the Si component that could completely eliminate potential device recovery.…”