Mass production of graphene powders affording high quality and environmental benignancy serves as a prerequisite for the practical usage of graphene in multiple energy storage applications. Herein, we exploit a salt-templated CVD approach to harness the direct synthesis of nitrogen-doped graphene (NG) nanosheets and related ink dispersions in a scalable, safe, efficient, and green fashion. Thus-fabricated NG accompanying large productivity, excellent electrical conductivity, and favorable solution processability possesses implications in printable energy storage devices. With the NG-based ink in hand, self-standing 3D architectures with programmable patterns can be directly printed over a myriad of substrates. Accordingly, both electrode preparation for flexible supercapacitors and separator modification in Li–S batteries can be enabled via printing by employing our NG-based composite inks. This work thus represents a practical route for mass production of graphene inks with cost-effectiveness and eco-friendliness for emerging energy storage technology.

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BiFeO3/Reduced Graphene Oxide (BFO/RGO) composites have been fabricated by a simple hydrothermal method. The X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman, and X-ray photoelectron spectroscopy (XPS) analysis reveal that graphene oxide was reduced in hydrothermal process and BFO/RGO composites were successfully synthesized. UV-visible absorption and photoluminescence properties show that the introduction of RGO can effectively reduce the recombination of photogenerated electron and hole pairs. Compared to the pristine BFO, the photocatalytic performance of BiFeO3 Graphene Oxide (BGO) composites is enhanced for the degradation of Methylene blue (MB) solution under visible light irradiation, and the result shows that the optimal amount of Graphene Oxide (GO) in the composites is 60 mg (BGO60). The excellent photocatalytic performance is mainly ascribed to improved light absorption, increased reactive sites, and the low recombination rate of electron-hole pairs. This work can provide more insights into designing advanced photocatalysts for wastewater treatment and environmental protection.

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The transition metal dichalcogenide (TMD)–metal interfaces constitute an active part of TMD-based electronic devices with optimized performances. Despite their decisive role, current strategies for nanoscale electronic tuning remain limited. Here, we demonstrate electronic tuning in the WSe2/Au interface by twist engineering, capable of modulating the WSe2 carrier doping from an intrinsic p-type to n-type. Scanning tunneling microscope/spectroscopy gives direct evidence of enhanced interfacial interaction induced doping in WSe2 as the twist angle with respect to the topmost (100) lattice of gold changing from 15 to 0°. Taking advantage of the strong coupling interface achieved this way, we have moved a step further to realize an n–p–n-type WSe2 homojunction. The intrinsic doping of WSe2 can be recovered by germanium intercalation. Density functional theory calculations confirm that twist angle and intercalation-dependent charge transfer related doping are involved in our observations. Our work offers ways for electronically tuning the metal–2D semiconductor interface.