2005
DOI: 10.1016/j.mseb.2004.12.084
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Electrochromic properties of atmospheric CVD MoO3 and MoO3–WO3 films and their application in electrochromic devices

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Cited by 116 publications
(68 citation statements)
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“…The obtained band gap values of 2.7-2.9 eV are in the range of the values of 2.5-3.0 eV previously reported in the literature. 1,2,36,38 For deposition temperatures of 300 and 350 C, a slightly higher band gap of 2.9 eV than for lower deposition temperatures was found, which is in line with the polycrystalline nature of the material.…”
Section: Optical Propertiessupporting
confidence: 66%
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“…The obtained band gap values of 2.7-2.9 eV are in the range of the values of 2.5-3.0 eV previously reported in the literature. 1,2,36,38 For deposition temperatures of 300 and 350 C, a slightly higher band gap of 2.9 eV than for lower deposition temperatures was found, which is in line with the polycrystalline nature of the material.…”
Section: Optical Propertiessupporting
confidence: 66%
“…[1][2][3][4] Thin films of MoO 3 are being used in gas sensors, 5,6 solid state lithium batteries, 7 and in the synthesis of MoS 2 by sulfurization. 8 Moreover, recently, MoO 3 has been used in organic photovoltaics, 9 perovskite solar cells, 10 and silicon solar cells as hole extraction layer.…”
Section: Introductionmentioning
confidence: 99%
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“…The changes in crystal structure that were observed in conjunction with TPR are summarized in Figure 3-4, which compares results from both powder samples and a 200 nm thick film with literature standards. The stable phase of molybdenum oxide has an orthorhombic structure, [36] and the asreceived powders were in good agreement with the literature standards (JCPDS 76-1003).…”
Section: Carburizationsupporting
confidence: 80%
“…This value was also lower than the one obtained from the vacuum deposited (0.6 mA·cm −2 [35]) tungsten trioxide (WO 3 ), and comparable with APCVD (0.02 mA·cm −2 [36]), evaporation-induced self-assembly (0.06 mA·cm −2 [37]), low-pressure CVD (0.08 mA·cm −2 [38]), and hydrothermal (0.04 mA·cm −2 [39]) growth WO 3 . Overall, this APCVD route is advantageous, since it produces higher current density compared with growth techniques which require longer reaction periods and higher substrate temperatures.…”
Section: Cyclic Voltammetrymentioning
confidence: 49%