Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

Peng, Haiyang; Li, G. P.; Ye, J. Y.; Zhang, Wei; Zhang, Z.; Wang, D. D.; Xing, Guozhong; Wu, Tom

doi:10.1063/1.3428365

Cited by 181 publications

(133 citation statements)

References 25 publications

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“…3(i). In fact, the scenario of electric-field-driven drift of charged oxygen vacancies is often cited to explain the bipolar resistive switching observed in a wide range of transition-metal oxides [32,34,[41][42][43][44]. The formation energy of oxygen vacancies is quite low in STO, and its presence cannot be excluded even in LAO/STO samples grown at high oxygen pressures (e.g., 10 À3 mbar in our experiments) [18,45].…”

Section: Resultsmentioning

confidence: 84%

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Luo

Turner

et al. 2013

Phys. Rev. X

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Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt=LaAlO 3 =SrTiO 3 heterostructures, where the conducting layer near the LaAlO 3 =SrTiO 3 interface serves as the ''unconventional'' bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO 3 =SrTiO 3 interface and the creation of defect-induced gap states within the ultrathin LaAlO 3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

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Section: Resultsmentioning

confidence: 84%

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Luo

Turner

et al. 2013

Phys. Rev. X

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“…Nevertheless, for resistive random access memory (RRAM) applications, using transparent AZO as a top electrode is limited. Several studies have been conducted on the influence of different metal electrodes on the characteristics of ZnO-based RRAM [2][3][4][5][6]. However, few studies have investigated the influence of oxide electrodes on the T-RRAM characteristic.…”

Section: Introductionmentioning

confidence: 98%

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

et al. 2015

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The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than 10 4 cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration.

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“…14 The nonlinear fitting results of the I-V characteristic is often used to analyze the origin of the conductive state. 28,31 Here, the red fitting curve in Fig. 2(a) reveals that the conduction behaviors in positive and negative branches are both based on electron tunneling through a thin residual barrier, as characterized by Eq.…”

mentioning

confidence: 90%

Redox-controlled memristive switching in the junctions employing Ti reactive electrodes

Xia

et al. 2011

AIP Advances

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We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-derived oxidation is presented by TEM and XPS experiment, respectively. Due to the redox of the top electrode Ti and the consequent drift of oxygen vacancies, the device shows two distinct resistance states under a sweeping voltage loading. ON state is controlled by tunneling process, while OFF state is controlled by Schottky emission conductive mechanism. The failure behaviors of such memristive junctions are also discussed. In the light of the redox principle, we demonstrate that the devices could be recovered by loading a long electrical reduction treatment

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Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

Cited by 181 publications

References 25 publications

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

Redox-controlled memristive switching in the junctions employing Ti reactive electrodes

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