Electrodeposited CuInSe/sub 2/ thin film devices

Raffaelle, Ryne P.; Mantovani, J. G.; Friedfeld, R.; Bailey, Sheila G.; Hubbard, Seth M.

doi:10.1109/pvsc.1997.654152

Cited by 3 publications

(4 citation statements)

References 11 publications

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“…These highly conductive sites will short to the Mo electrode, resulting in the formation of Cu x Se y , which has been determined as a precursor phase of electrodeposited CuInSe 2 films ͑see later discussion͒. 9,10,[20][21][22] Due to the high conductivity of the pinholes, Cu x Se y will continue to grow at a faster rate than the inclusion of In 3+ and Ga 3+ , resulting in the formation of the floret-like structures, similar to those observed to form at pinholes during electrodeposition of Cu on thin Al 2 O 3 films deposited on conducting electrodes. 48,49 This is also consistent with the observed shunting of devices processed with Cu͑In,Ga͒Se 2 , containing a high frequency of cauliflower-like secondary phases.…”

Section: G522mentioning

confidence: 99%

“…8 Single-step deposition processes are appealing in order to simplify device manufacture. The successful deposition of CuInSe 2 from a single electrochemical bath onto a range of different substrate types has been previously reported, [8][9][10][11][12][13][14][15][16][17][18][19] and a few groups have attempted to describe bath chemistry and mechanisms of film growth. 9,11,[20][21][22] As-deposited films are generally of low crystallinity, and a post-deposition anneal, often in a selenium-containing atmosphere, is required to drive formation reactions and film recrystallization while maintaining or controlling film chemistry.…”

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confidence: 99%

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Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

Calixto

Dobson

McCandless

et al. 2006

J. Electrochem. Soc.

119

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Single-bath electrodeposition of polycrystalline Cu͑In,Ga͒Se 2 thin films for photovoltaic applications is described. Cu͑In,Ga͒Se 2 was deposited onto Mo electrodes from low concentration aqueous baths containing CuCl 2 , InCl 3 , GaCl 3 , and H 2 SeO 3 . Buffering the solutions to pH ϳ 2.5 stabilized bath chemistry and improved Cu͑In,Ga͒Se 2 film composition. Bath concentrations were shown to affect composition of deposited films, with a bath ͓Se 4+ ͔/͓Cu 2+ ͔ ratio of 1.75 required to maintain suitable deposited Se and Cu levels, while ͓In 3+ ͔ could be adjusted to control deposited In and Ga. Deposited films initially exhibited significant cracking, which was prevented by lowering the ͓Se 4+ ͔ in the bath, and contained Cu 2−x Se as secondary phases, resembling cauliflower florets, embedded in the film surfaces. The formation of these secondary phases was overcome by pretreating the Mo electrodes with a short 1 min deposition from the Cu͑In,Ga͒Se 2 bath. This, coupled with a multipotential deposition regime, led to growth of smooth, compact, crack-free films of near stoichiometric values. Mechanisms of film growth and morphology control are discussed. All as-deposited films exhibit low crystallinity, and for device processing require recrystallization by annealing in an H 2 Se atmosphere. Promising preliminary results of electrodeposited Cu͑In,Ga͒Se 2 devices are presented.Polycrystalline Cu͑In,Ga͒Se 2 has exhibited very promising performance for thin film photovoltaic ͑PV͒ application, now exceeding 19% conversion efficiencies at the laboratory scale. 1,2 The best quality devices, hitherto, have been processed using high vacuum based techniques. 2 However, there is an interest in developing deposition techniques that avoid the use of high vacuum, especially when considering scale-up to industrial processing levels. Electrodeposition requires only off-the-shelf, low cost equipment and allows deposition over large areas at low temperature conditions, good control of film thickness, and potentially high utilization of bath species. The high absorption coefficient of Cu͑In,Ga͒Se 2 ͑ϳ10 5 cm −1 ͒ allows thin films, Ͻ2 m, to be applied to PV devices. Electrodeposited CdTe PV devices have been successfully processed, reaching near commercial performance. 3 A number of groups have reported electrodeposition-based processing of CuInSe 2 and Cu͑In,Ga͒Se 2 films, employing a number of approaches: sequential deposition of individual metal films, 4 deposition of various precursors, 5-7 and single-step deposition, where all elements are deposited simultaneously. 8 Single-step deposition processes are appealing in order to simplify device manufacture. The successful deposition of CuInSe 2 from a single electrochemical bath onto a range of different substrate types has been previously reported, 8-19 and a few groups have attempted to describe bath chemistry and mechanisms of film growth. 9,11,20-22 As-deposited films are generally of low crystallinity, and a post-deposition anneal, often in a selenium-containing atmosphere, ...

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Section: G522mentioning

confidence: 99%

mentioning

confidence: 99%

Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

Calixto

Dobson

McCandless

et al. 2006

J. Electrochem. Soc.

119

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“…A CuInSe 2 -based p-n junction was deposited from a single aqueous solution using a step function potential by Raffaelle et al 113) CIS film was grown on an ITO glass substrate or a molybdenum substrate in a bath containing CuSO 4 , In 2 (SO 4 ) 3 , SeO 2 , and sodium citrate. A 1.0 mm film was deposited at −1.0 V vs. SCE, after which the potential was immediately changed to −1.3 V vs. SCE prior to depositing a 0.1 mm film on the first CIS film.…”

Section: )mentioning

confidence: 99%

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

Chung¹,

Lee²

2012

Journal of Electrochemical Science and Technology

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:Although indium (In) is not an abundant element, the use of indium is expected to grow, especially as applied to copper-indium-(gallium)-selenide (CI(G)S) solar cells. In future when CIGS solar cells will be used extensively, the available amount of indium could be a limiting factor, unless a synthetic technique of efficiently utilizing the element is developed. Current vacuum techniques inherently produce a significant loss of In during the synthetic process, while electrodeposition exploits nearly 100% of the In, with little loss of the material. Thus, an electrochemical process will be the method of choice to produce alloys of In once the proper conditions are designed. In this review, we examine the electrochemical processes of electrodeposition in the synthesis of indium alloys. We focus on the conditions under which alloys are electrodeposited and on the factors that can affect the composition or properties of alloys. The knowledge is to facilitate the development of electrochemical means of efficiently using this relatively rare element to synthesize valuable materials, for applications such as solar cells and light-emitting devices.

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“…We have previously shown that the Cu-to-In ratio will demonstrate a linear dependance with deposition potential over a fairly wide range [7]. Therefore, we are able to deposit thin films with different electrical, optical properties, and semiconductor type from the same aqueous solution by simply changing the deposition voltage [8]. The optical band gap of CIS can be calculated from its absorption spectrum assuming a direct energy gap [9].…”

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Electrodeposited CuInSe₂ Thin Film Junctions

et al. 1997

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We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectrocopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

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Electrodeposited CuInSe/sub 2/ thin film devices

Cited by 3 publications

References 11 publications

Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

Electrodeposited CuInSe₂ Thin Film Junctions

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Electrodeposited CuInSe/sub 2/ thin film devices

Cited by 3 publications

References 11 publications

Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

Controlling Growth Chemistry and Morphology of Single-Bath Electrodeposited Cu(In,Ga)Se[sub 2] Thin Films for Photovoltaic Application

Electrochemically Fabricated Alloys and Semiconductors Containing Indium

Electrodeposited CuInSe2 Thin Film Junctions

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Electrodeposited CuInSe₂ Thin Film Junctions