2022
DOI: 10.3389/fchem.2021.810256
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Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

Abstract: High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advantages of pulse electrodeposition, template-assisted selective epitaxy, and recrystallization from a melt. Efficient electrodeposition of nano-crystalline and stochiometric InSb in planar templates on Si (001) is achie… Show more

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Cited by 3 publications
(7 citation statements)
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“…2 b). This contrasts with our previous results [ 6 ] of conformal filling with amorphous and nanocrystalline InSb deposits.
Fig.
…”
Section: Resultscontrasting
confidence: 99%
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“…2 b). This contrasts with our previous results [ 6 ] of conformal filling with amorphous and nanocrystalline InSb deposits.
Fig.
…”
Section: Resultscontrasting
confidence: 99%
“…Interestingly, the InSb appears to be in contact with the Si surface. However, there is no epitaxial relationship between the Si and the InSb, and the expected dissolution or etching at the Si interface as previously reported for InSb-Si system [ 6 ] by the InSb melt was not observed. Both findings suggest that an unintentional contamination of interface was introduced during the saturation process, suppressing the formation of a heteroepitaxial InSb-Si interface.…”
Section: Resultsmentioning
confidence: 53%
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