Electrodeposition of Bi2Te3 films

Magri, Pierre; Boulanger, C.; Lecuire, J.M.

doi:10.1063/1.46850

Cited by 17 publications

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“…Bulk doped Bi 2 Te 3 is currently the most efficient thermoelectric material at 25 °C, and a good target material for thermoelectric nanowires. Prior work has shown that high-quality films of Bi 2 Te 3 can be deposited directly by electrochemical reduction of Bi 3+ and HTeO 2 + in acidic aqueous solutions . Wires with a diameter of ∼250 nm have also been prepared by attaching a porous alumina template to a conducting material and confining the growth to within the pores .…”

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confidence: 99%

Electrodeposition of Ordered Bi₂Te₃ Nanowire Arrays

et al. 2001

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Electrodeposition of Ordered Bi₂Te₃ Nanowire Arrays

et al. 2001

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“…Details about the electrochemical deposition of Bi2Te3 and related materials may also found in [31,32]. A new approach to develop thermoelectric devices using electroplated material in a wafer technology for devices is currently started by [33,34].…”

Section: Mems Non Cmos Devicesmentioning

confidence: 99%

Thermoelectric micro devices: current state, recent developments and future aspects for technological progress and applications

Böttner

2002

Twenty-First International Conference on Thermoelectrics, 2002. Proceedings ICT '02.

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Due to their unique expected properties thermoelectric microdevices, thermogenerators as well as Peltier coolers, are of high demand for different applications namely for telecommunication purposes. Thus worldwide efforts are undertaken to expand the technology for thermoelectric devices into the field of typical microsystem technologies including aspects of advanced low dimensional high ZT materials. Favourite material systems are up to now the bismuthtelluride (V-VI) compounds and the silicodgermanium (IV-Iv) alloys. Recent results prove the capability to implement low dimensional material of both material systems into microsystem devices and demonstrate wafer based microelectronic technologies for the fabrication of thennoelectric devices even for the non CMOS hismuthtelluride related compounds. Thus this survey will present the state of the art [l-91 in a summary of recent results together with an more extended description of the MicroPelt" approach as an example for a wafer based fabrication concept close to microelectronics manufacturing. Strengths and weaknesses of the different presented technological concepts will be discussed under some viewpoints.

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“…Moreover, the synthesis experiments can be made in laboratory atmosphere as compared to standard physical and chemical vapour deposition techniques. Electrodeposition has been successfully applied to the production of bismuth telluride binaries [6][7][8][9][10][11] and Sb-and Se-doped ternaries [12]. Spectroscopic Ellipsometry (SE) is an alternative and powerful method to characterize both in ex and in situ modes such electroplated Bi 2 Te 3 thin films through their optical, morphological and electronic properties.…”

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Analysis of carrier parameters and bandgap of electroplated Bi₂Te₃ films by infrared spectroscopic ellipsometry

Zimmer

Stein

Terryn

et al. 2008

Phys. Status Solidi (c)

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Polycrystalline thin films have been grown on gold substrates by electrodeposition, leading to different film compositions. In particular, our conditions allow growing smooth and shiny surface films in a thickness range of nanometers to micrometers. In this article, electroplated layers were analysed by InfraRed Spectroscopic ellipsometry. The dielectric functions have been obtained from ellipsometry analyses using the Drude and Tauc‐Lorentz models. We attributed the scattering distribution of the mobility with the carrier concentration to the presence of grain boundaries in the films. The energy bandgap appears to be constant whatever the carrier concentration. This result can be interpreted by bandgap shrinkage that occurs simultaneously with bandgap widening. These results were supported by additional Hall Effect Measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electrodeposition of Bi2Te3 films

Cited by 17 publications

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Electrodeposition of Ordered Bi₂Te₃ Nanowire Arrays

Electrodeposition of Ordered Bi₂Te₃ Nanowire Arrays

Thermoelectric micro devices: current state, recent developments and future aspects for technological progress and applications

Analysis of carrier parameters and bandgap of electroplated Bi₂Te₃ films by infrared spectroscopic ellipsometry

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Electrodeposition of Bi2Te3 films

Cited by 17 publications

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Electrodeposition of Ordered Bi2Te3 Nanowire Arrays

Electrodeposition of Ordered Bi2Te3 Nanowire Arrays

Thermoelectric micro devices: current state, recent developments and future aspects for technological progress and applications

Analysis of carrier parameters and bandgap of electroplated Bi2Te3 films by infrared spectroscopic ellipsometry

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Product

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Electrodeposition of Ordered Bi₂Te₃ Nanowire Arrays

Electrodeposition of Ordered Bi₂Te₃ Nanowire Arrays

Analysis of carrier parameters and bandgap of electroplated Bi₂Te₃ films by infrared spectroscopic ellipsometry