Electrodeposition of p-Type Sb x Te y Thermoelectric Films

Lim, Jae-Hong; Park, Mi Yeong; Lim, Dong Chan; Yoo, Bongyoung; Lee, Jung-Ho; Myung, Nosang V.; Lee, Kyu Hwan

doi:10.1007/s11664-011-1629-6

Cited by 18 publications

(8 citation statements)

References 12 publications

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“…This strong electron doping does not occur for Sb 2 Te 3 , 10,11 rendering this material very promising for reaching the topological transport regime. Sb 2 Te 3 thin lms were prepared in the past by microwave heating, 12,13 vapour phase transport, [14][15][16][17][18][19][20][21] vapour-liquid-solid growth, 22,23 atomic layer epitaxy, 24 electrochemical deposition, [25][26][27][28][29][30][31] DC and RF sputtering, 32,33 and molecular beam epitaxy (MBE). 34,35 Unfortunately, these processes very oen only produced polycrystalline or highly faceted Sb 2 Te 3 lms, which additionally oen suffered from high antisite concentrations, which typically result in a strong shi of the Fermi energy.…”

Section: Introductionmentioning

confidence: 99%

Deposition of topological insulator Sb2Te3 films by an MOCVD process

Bendt

Zastrow²,

Nielsch³

et al. 2014

J. Mater. Chem. A

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films were grown by a MOCVD process on Al 2 O 3 (0001) substrates at 400 C by use of i-Pr 3 Sb and Et 2 Te 2 and characterized by SEM, AFM, XRD, EDX and Auger spectroscopy. The electrical sheet resistivity was measured in the range of 4 to 400 K, showing a monotonic increase with increasing temperature. The valence band structure probed by angle-resolved photoemission shows the detailed dispersions of the bulk valence band and the topological surface state of a quality no less than for optimized bulk single crystals. The surface state dispersion gives a Dirac point roughly 30 meV above the Fermi level leading to hole doping and the presence of bulk valence states at the Fermi energy.

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Section: Introductionmentioning

confidence: 99%

Deposition of topological insulator Sb2Te3 films by an MOCVD process

Bendt

Zastrow²,

Nielsch³

et al. 2014

J. Mater. Chem. A

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show abstract

“…The nanowires and nanotube had an average lamellar thickness of 36 and 43 nm, respectively (Pinisetty et al, 2011b). Lim et al (2011) electrodeposited p-tyape Sb x Te y thin films in an acidic solutions. The effect of TeO 2 concentrations was investigated.…”

Section: Electrodeposition Of Bismuth Telluride (Bi 2 Te 3 ) Based Materials Including Bite Bisbte Bitese and Bisbtesementioning

confidence: 99%

“…Additionally, more negative applied potential would reduce the carrier concentration and mobility, which is possibly owing to increase in defects. A Seebeck coefficient of 118 μV/K was obtained at room temperature for the as-deposited Sb 2 Te 3 film (Lim et al, 2011). Qiu et al (2011) synthesized Sb 2 Te x (2 < × < 6) films in the alkaline solution with TeO 3 2-, SbO 2 − , diaminourea polymer and triethanolamine.…”

Section: Electrodeposition Of Bismuth Telluride (Bi 2 Te 3 ) Based Materials Including Bite Bisbte Bitese and Bisbtesementioning

confidence: 99%

Comprehensive Review on Thermoelectric Electrodeposits: Enhancing Thermoelectric Performance Through Nanoengineering

Wu¹,

Kim²,

Lim³

et al. 2021

Front. Chem.

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Thermoelectric devices based power generation and cooling systemsystem have lot of advantages over conventional refrigerator and power generators, becausebecause of solid-state devicesdevices, compact size, good scalability, nono-emissions and low maintenance requirement with long operating lifetime. However, the applications of thermoelectric devices have been limited owingowing to their low energy conversion efficiency. It has drawn tremendous attention in the field of thermoelectric materials and devices in the 21st century because of the need of sustainable energy harvesting technology and the ability to develop higher performance thermoelectric materials through nanoscale science and defect engineering. Among various fabrication methods, electrodeposition is one of the most promising synthesis methods to fabricate devices because of its ability to control morphology, composition, crystallinity, and crystal structure of materials through controlling electrodeposition parameters. Additionally, it is an additive manufacturing technique with minimum waste materials that operates at near room temperature. Furthermore, its growth rate is significantly higher (i.e., a few hundred microns per hour) than the vacuum processes, which allows device fabrication in cost effective matter. In this paper, the latest development of various electrodeposited thermoelectric materials (i.e., Te, PbTe, Bi2Te3 and their derivatives, BiSe, BiS, Sb2Te3) in different forms including thin films, nanowires, and nanocomposites were comprehensively reviewed. Additionally, their thermoelectric properties are correlated to the composition, morphology, and crystal structure.

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“…In our previous work, we investigated structural, electrical, and thermoelectrical properties of electrodeposited Sb x Te y thin films by varying electrolyte compositions and applied deposition potentials [10]. In the present study, systematic studies are performed on Sb x Te y thin films electrodeposited from acidic nitric acids at room temperature to correlate their material/structural properties vs. thermoelectrical/electrical properties under different annealing temperatures. ]…”

Section: Introductionmentioning

confidence: 99%