Electroless Co(Mo,P) films for Cu interconnect application

Electroless Ni–Mo–P diffusion barriers with Pd-activated self-assembled monolayer on SiO2

“…For producing an electroless barrier layer, however, a sputtered seed layer is usually required to initiate the electroless deposition reaction [4,5]. A sputtered layer itself can also be employed as barrier layer [6][7][8][9][10][11][12][13][14][15].…”

Optimisation of process parameters for electroless plating of Co–W–P capping layers from an alkali-metal-free bath

“…Therefore, there is much research interest in the fabrication of metallic capping layers. Effort has been made to cap copper interconnections with cobalt-containing films such as Co-P, Co-W-P, Co-W-B and Co-Mo-P [1,[9][10][11][12] and nickelcontaining films such as Ni-P, Ni-W-P and Ni-Re-P [13][14][15]. Among the above-mentioned metallic capping/barrier layers, it was reported that the Co-W-P films had better performance as an effective capping/barrier layer for copper metallization up to 550°C [3,16].…”

“…Both electroless [10][11][12] and electrochemical [17][18][19][20] deposition methods can be used to deposit Co-W-P thin films on a copper substrate. The electroless deposition is widely used to fabricate the metallic capping/barrier layers because it is a simple and inexpensive method.…”

Characterisation of electrodeposited Co–W–P amorphous coatings on carbon steel

“…Co-W-P thin films can be fabricated by both electroless [8][9][10][11] and electrochemical deposition methods [12][13][14][15]. Recently, it has been reported that electrodeposition method has some advantages over electroless deposition such as lower processing temperature, better control over the deposition technique and thus, a wide range of compositions [12][13][14][15].…”