Electroless Co(W,P) and Co(Mo,P) deposition for Cu metallization applications

Shacham‐Diamand, Yosi; Zylberman, A.; Petrov, Nicolai; Sverdlov, Yelena

doi:10.1109/icsict.2001.981506

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…23 With a suitable choice of metallic layer, the adhesive energy at the interface can be significantly increased and this has been suggested to slow the rate of interfacial electromigration of Cu. The most commonly used metal cap layers are either an electro-deposited CoWP alloy, 24,25 or Cu silicide.…”

Section: Improvement Strategies For the Drift Velocitymentioning

confidence: 99%

Strategies to Ensure Electromigration Reliability of Cu/Low-k Interconnects at 10 nm

Oates

2014

ECS J. Solid State Sci. Technol.

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A key element for future silicon IC technology development is the containment of electromigration -induced failure of Cu / low-k interconnects. Continued progress in meeting electromigration reliability requirements for future technology nodes will require a multi-faceted approach to the problem: first the development of effective process solutions to limit the impact of technology scaling on electromigration life-time reduction; and second, the provision of models of failure that are representative of circuit operation to determine realistic current-limiting design rules. We will show that process solutions involve limiting the rate of transport along interfaces and grain boundaries in the damascene trench architecture using metal capping layers and Cu alloys. Most models of electromigration failure have been developed using DC stress conditions, while circuits predominantly operate with non-DC (pulsed DC or AC) signals. Understanding the relationship between failure under DC and non-DC conditions is a necessary aspect of realistic reliability characterization. In this paper we review: our recent studies that establish the relationship between Cu microstructure, metallic capping and dilute Cu alloy additions and thereby identify effective scenarios for mitigation with technology scaling; and experimental studies of electromigration failure under non-DC stress that explore the physical mechanisms involved. Electromigration failure of interconnects has been a long-standing concern for the development of highly reliable integrated circuits (IC). Despite intense efforts following the first observation of electromigration -related failure of Al circuit interconnects in 1966, 1 it has proven impossible to find a robust process solution by material modification for either Al or the more recently introduced Cu metal system. It remains an issue that can only be partially mitigated with process solutions, and ultimately it is controlled at the circuit level by the use of current limiting design rules. There is a prevalent concern that this method of control of the rate of electromigration failure will be detrimental to circuit performance. Therefore, during technology development, a balance must be found to ensure circuit performance is maintained without seriously impairing electromigration reliability. Achieving this balance requires a thorough fundamental understanding of the factors that determine the efficacy of process mitigation techniques. Moreover, current limiting design rules are extrapolated from accelerated test data using models of the failure mechanism, and the models must accurately reflect the physical mechanisms of failure.For the most advanced Si process technologies currently being manufactured with Cu and low-k dielectrics, electromigration failure times have decreased rapidly with technology progression, adding urgency to the problem of assuring electromigration reliability. Fig. 1 shows the reduction in failure time for both long conductor lengths and for shorter lengths; 2,3 for the latter, the Bl...

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Section: Improvement Strategies For the Drift Velocitymentioning

confidence: 99%

Strategies to Ensure Electromigration Reliability of Cu/Low-k Interconnects at 10 nm

Oates

2014

ECS J. Solid State Sci. Technol.

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“…Presence of palladium causes some inherent process issues like copper corrosion.Electroless plating process for CoWB or CoWPB is particularly interesting because of its capability to form selective deposition without an external catalyzing material. Other ternary electroless plated alloys reported include CoMoP and NiMoP (13,14).…”

Section: Introductionmentioning

confidence: 99%

Electroless Plated CoWB and COWPB Films for Copper Cap Applications

Mathew¹,

Michaelson²,

Garcia³

et al. 2006

ECS Trans.

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Electroless plated CoWB and CoWPB films were studied for copper cap applications in semiconductor device processing. Both films were found to be polycrystalline but introduction of phosphorus made the CoWPB film less crystalline than CoWB. Films were stable for four cycles of thermal annealing with each cycle consisting of a 2 hour anneal at 400åC. Cu diffused through thin cap films after one thermal cycle but for subsequent cycles no significant increase in copper concentration was observed. It appeared that the solubility limit of Cu in cobalt is reached limiting further diffusion of Cu after the first cycle at this annealing temperature. Electrical data collected for 3.9m snake and comb test structures with CoWB and CoWPB showed less than one order of magnitude increase in leakage and less than a 1.5 % change in resistance.

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The Effects of Al Doping and Metallic-Cap Layers on Electromigration Transport Mechanisms in Copper Nanowires

Lin

Oates

2011

IEEE Trans. Device Mater. Relib.

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Electroless Co(W,P) and Co(Mo,P) deposition for Cu metallization applications

Cited by 3 publications

References 13 publications

Strategies to Ensure Electromigration Reliability of Cu/Low-k Interconnects at 10 nm

Strategies to Ensure Electromigration Reliability of Cu/Low-k Interconnects at 10 nm

Electroless Plated CoWB and COWPB Films for Copper Cap Applications

The Effects of Al Doping and Metallic-Cap Layers on Electromigration Transport Mechanisms in Copper Nanowires

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