Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

“…While Ga x O y interfacial layer does not form in many cases, for example when a few mm thick ZnTe is used [35,36], some of the previous reports of successful p-type doping [18] and device fabrication [31][32][33][34] using As diffusion into the ZnO/GaAs heterostructures have to be revisited since very limited structural characterization is reported. Clearly, SIMS data cannot be used as the proof of substitutional or interstitial As incorporation into the ZnO alloy.…”

“…In particular, p-type doping utilizing thermal As diffusion from GaAs substrates into the ZnO films [18,21,[30][31][32][33][34] and by oxidation of the ZnTe/GaAs heterostrucutres [35,36] was realized by a number of research groups. In addition, both n-and p-type ZnO films were synthesized through the annealing of undoped ZnSe crystals in the activated oxygen atmosphere (radical beam gettering epitaxy) [37,38].…”

Preparation and characterizations of electroluminescent p-ZnO : N/n-ZnO : Ga/ITO thin films by spray pyrolysis method

“…Alternatively, ZnO is a promising material for UV-blue LEDs with a direct bandgap of ∼3.37 eV and high exitonic binding energy of 60 meV, as compared to 21 meV for GaN. [1][2][3][4][5][6] In addition, the decomposition temperature of ZnO is 1975…”

Ultraviolet random lasing from Mg0.12Zn0.88O:N/ZnO:Ga single-heterostructure diode

“…Recently, much effort has been invested in ZnO-based random laser research for various potential applications such as bio-sensing, speckle-free imaging, medical diagnostics, and information storage and defense [6][7][8]. There have been many reports of ZnO-based homojunction LED devices [9][10][11][12], and also, several ZnO-based random lasing device structures have already been demonstrated, including homojunctions, metal-insulator-semiconductor (MIS) structures, and heterostructured devices with the combination of n-ZnO and other p-type materials [13][14][15][16][17][18][19][20]. For practical applications, it is essential to significantly enhance the output power of the device and also have controllability on the wavelength of the random lasing modes [19,21].…”