2008
DOI: 10.1016/j.jcrysgro.2008.03.027
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Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

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Cited by 4 publications
(2 citation statements)
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“…Second, the dopants are limited by the substrates used in this method. Third, the conductive nature of the GaAs (or InP) substrate used will tamper the reliability of the Hall data of the ZnO films [16]. The above shortcomings impair the usefulness of thermal diffusion method.…”
Section: Introductionmentioning
confidence: 99%
“…Second, the dopants are limited by the substrates used in this method. Third, the conductive nature of the GaAs (or InP) substrate used will tamper the reliability of the Hall data of the ZnO films [16]. The above shortcomings impair the usefulness of thermal diffusion method.…”
Section: Introductionmentioning
confidence: 99%
“…However, the p-type ZnO nanostructures have rarely been investigated in comparison with n-type ZnO. To seek better p-type dopants, recently many authors have reported that ZnO doped by single acceptor, such as N, 7 P, 8 As, 9 and Sb, 10 exhibits superior electrical properties. Although the ZnO:N nanostructures are able to produce the p-type semiconductor properties, reliability is still a problem.…”
mentioning
confidence: 99%