Electroluminescence from Au/native oxide/p-Si and its correlation to that from Au/porous Si

Qin, G. G.; Huang, Yanyi; Lin, Jianhua; Zhang, L.Z.; Zong, Beibei; Zhang, B.R.

doi:10.1016/0038-1098(95)00137-9

Cited by 35 publications

(22 citation statements)

References 24 publications

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“…If the oxide was completely etched away, there was no EL, and if insufficient was removed there was no current, and therefore, also no EL. These EL results are similar to those obtained from the native oxide on p-type Si, using a gold contact, 14 discussed below.…”

Section: Methodssupporting

confidence: 89%

Electroluminescence from mechanically damaged oxidized silicon

Yuan

Haneman

Andrienko

et al. 1998

Journal of Applied Physics

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We have found significant electroluminescence (EL), clearly visible in room light, to be produced from lightly oxidized Si wafers, which have been mechanically scratched, or indented with a diamond tip. The EL occurs in the visible and infrared ranges. Undamaged oxidized samples, where the oxide is chemically thinned to allow current from a top contact to pass, also show similar EL. However, damaged Si wafers that have only normal thin or no oxide, show negligible EL. A search for quantum-confined particles in indentation pits by scanning tunneling microscopy does not show any present. The results point strongly to the EL mechanism being related to the damage creating areas of optimum oxide thickness. The results are compared with those from spark-processed and laser-grooved silicon.

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Section: Methodssupporting

confidence: 89%

Electroluminescence from mechanically damaged oxidized silicon

Yuan

Haneman

Andrienko

et al. 1998

Journal of Applied Physics

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“…The visible EL in this experiment is similar to the results reported from native SiO 2 on p, p ϩ , n ϩ Si substrates, 13,17 except for a small peak position difference. This may be due to different techniques employed in sample preparation.…”

Section: And D Haneman A)supporting

confidence: 90%

“…Although there are reports on visible EL from native SiO 2 on p-type Si substrates, 13 visible EL from native oxides on the normal n-type Si substrate does not appear to have been shown. There is a recent report on EL from Au/native oxide/n ϩ -Si structures ͑0.01 ⍀ cm͒ showing low voltage breakdown behavior, which emits under reverse bias.…”

Section: And D Haneman A)mentioning

confidence: 57%

“…12 It has also been reported that EL can occur in Au/native oxide/p-Si structures. 13 In the cases of PS and some nano-Si structures, it is widely accepted that visible photoluminescence ͑PL͒ and also some of the EL, is due to the quantum confinement effect. 14,15 However, in several cases, other explanations like the presence of luminescent centers 16 are possible.…”

Section: And D Haneman A)mentioning

confidence: 99%

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Visible electroluminescence from native SiO2 on n-type Si substrates

Yuan

Haneman

1999

Journal of Applied Physics

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Visible electroluminescence (EL) has been observed from Ag (film or paste)/native SiO2/n-type Si structures. The diodes show good rectification behavior and the EL occurs only under reverse bias conditions when the top Ag electrode is negative. For p-type samples, a forward bias is required. The intensity of the EL is proportional to the diode current and its spectrum peaks at 620–640 nm. A model based on oxygen-related luminescent centers in the native oxide is proposed.

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“…Since DiMaria et al 1 reported electroluminescence ͑EL͒ from the Au/SiO 2 /Si-rich oxide/n-Si structures, visible EL from Si-based structures, e.g., porous Si 2-6 and native oxide Si 7,8 and nanometer Si-rich SiO 2 on Si substrates, 9 have been studied due to the prospect of photoelectronics applications. We have observed strong and stable EL from a semitransparent Au film/SiO 2 /Si/SiO 2 /p -Si structure under forward bias rather than reverse bias and studied its EL characteristics.…”

mentioning

confidence: 99%

Electroluminescence from semitransparent Au film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si structure under reverse bias

Heng

Sun

Wang

et al. 2000

Applied Physics Letters

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Nanometer SiO2/nanometer Si/nanometer SiO2 double-barrier (DB) structures, with Si layers having eleven different thicknesses from 2 to 4 nm, were deposited on n+–Si substrates using the magnetron sputtering technique. Strong electroluminescence (EL) from semitransparent Au film/DB/n+–Si structure was observed under reverse bias in a range of about 5–7 V. It is found that every EL spectrum of the structure can be decomposed into two Gaussian bands with peaks at around 1.85 and 2.25 eV, and their intensities and current swing synchronously with increasing nanometer Si layer thickness; the periodic length of swing is consistent with half of the de Broglie wavelength of the carriers. A comparison was carried out between EL from the Au/DB/n+–Si structure under reverse bias and that from the Au/DB/p–Si structure under forward bias reported previously.

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Electroluminescence from Au/native oxide/p-Si and its correlation to that from Au/porous Si

Cited by 35 publications

References 24 publications

Electroluminescence from mechanically damaged oxidized silicon

Electroluminescence from mechanically damaged oxidized silicon

Visible electroluminescence from native SiO2 on n-type Si substrates

Electroluminescence from semitransparent Au film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si structure under reverse bias

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