Electroluminescence from heterojunctions of nanocrystalline CdS and ZnS with porous silicon

Gokarna, Anisha; Pavaskar, N. R.; Sathaye, Shivaram D.; Ganesan, V.; Bhoraskar, S. V.

doi:10.1063/1.1483381

Cited by 44 publications

(25 citation statements)

References 13 publications

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“…The surface roughness was determined for the thin films from the AFM images by the instrument's data analysis software (shown in table 3). All the thin films show granular structure with variable rolling hills [29]. The formation of bigger rolling hills was found to reduce from figure 5(a) to (f).…”

Section: Influence Of C Content On Dc Conductivitymentioning

confidence: 87%

Carbon impact on surface morphology and electrical properties of Cu-TiC thin film

Roy

Hembram

Ghosh

et al. 2020

Mater. Res. Express

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In recent years, synthesis of TiC reinforced Cu matrix composites are comprehensively utilized for industrial applications. Synthesis of Cu-TiC as a thin film can also be an intriguing challenge for such applications. In this work, Cu-TiC thin film was deposited by DC magnetron co-sputtering method and examined to investigate the role of C content on the micro-structure, electrical conductivity and surface morphology by using XRD, UV-vis spectroscopy, I-V characteristics, AFM, SEM and EDX analysis. The wt% of C was varied from 14 to 67% while depositing the Cu-TiC films. All the films have resulted to be polycrystalline with Cu and TiC phases. The optical band-gap has decreased from 2.59 to 1.93 eV and the refractive index got enhanced from 2.92 to 3.38 with increase in wt% of C. The ideality factor, electrical resistance, surface roughness across the films has also decreased as wt% of C was increased in Cu-TiC films.

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Section: Influence Of C Content On Dc Conductivitymentioning

confidence: 87%

Carbon impact on surface morphology and electrical properties of Cu-TiC thin film

Roy

Hembram

Ghosh

et al. 2020

Mater. Res. Express

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“…CdS polycrystalline thin-films have a very wide range of applications, especially in CuIn x Ga 1−x Se 2 (CIGS) and CdTe thin-film solar cells, respectively as buffer layer and window layer materials [1,2]. In addition, it was reported that they are also used as electroluminescent materials [3], field-effect-transistors [4], and light emitting diodes [5]. Regarding the fabrication of these films, a variety of techniques have been developed, such as electrodeposition [6], spray pyrolysis [7], vacuum evaporation [8], and chemical bath deposition [9].…”

Section: Introductionmentioning

confidence: 99%

CdS Thin Films Deposited by CBD Method on Glass

Liu

Chang

et al. 2011

Chinese Journal of Chemical Physics

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CdS thin films were prepared by chemical-bath-deposited method and the effect of temperature and time on the properties of CdS thin films was studied. Independent of the deposited temperature, the growth was mainly controlled by the ion-by-ion growth mechanism at the beginning of the film deposition, then the cluster-by-cluster mechanism came to be dominant. The growth rate increased faster with the increasing of temperature until the thickness reached the limitation, then thickness instead become thinner. The scanning electron microscope results revealed that the morphology of the CdS film changed from pinholes to rough, inhomogeneous surface with increasing deposition time and deposition temperature. The Xray diffraction results showed the film structure was a mixture of two phases: hexagonal and cubic, and it was very important to controll deposition time to the film's crystal phase. All films in depth of approximate 100 nm existed above 65% transmittance, the absorption edge became "red-shift" with temperature rising. At 60 and 70 • C, with 20 min deposited-time, the energy band gap was more than 2.42 eV and decreased with time, while at 80 and 90 • C, the energy band gap was less than 2.42 eV and increased little when the time changed from 10 min to 15 min at 80 • C.

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“…Si À H bonds would break and other bonds form after ZnS deposition on the PS surface. It can be assumed that the PL in PS passivating bonds might be positioned much below the valence band edge of the PS [26]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

Wang

Huang

et al. 2011

Optics & Laser Technology

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Electroluminescence from heterojunctions of nanocrystalline CdS and ZnS with porous silicon

Cited by 44 publications

References 13 publications

Carbon impact on surface morphology and electrical properties of Cu-TiC thin film

Carbon impact on surface morphology and electrical properties of Cu-TiC thin film

CdS Thin Films Deposited by CBD Method on Glass

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

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