Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

Dartsch, H.; Tessarek, Christian; Aschenbrenner, T.; Figge, S.; Kruse, C.; Schowalter, Marco; Rosenauer, A.; Hommel, D.

doi:10.1016/j.jcrysgro.2010.12.008

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…However, there is no report on nitride-based QDIB SC in experiment. More optoelectronics applications of III-nitride-based QDs have been proposed in these years such as SPSs [75][76][77] and intersubband light sources [78]. A triggered single-photon emission, which is a key requirement for the development of quantum key distribution systems [79] and for quantum computing schemes based on linear optics [80], from GaN QDs at temperature up to 200 K has been reported recently [75].…”

Section: Qd Solar Cellmentioning

confidence: 99%

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

Weng

Ling

et al. 2011

Nano-Micro Lett.

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During the last two decades, III-nitride-based quantum dots (QDs) have attracted great attentions for optoelectronic applications due to their unique electronic properties. In this paper, we first present an overview on the techniques of fabrication for III-nitride-based QDs. Then various optoelectronic devices such as QD lasers, QD light-emitting diodes (LEDs), QD infrared photodetectors (QDIPs) and QD intermediate band (QDIB) solar cells (SCs) are discussed. Finally, we focus on the future research directions and how the challenges can be overcome.

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Section: Qd Solar Cellmentioning

confidence: 99%

III-Nitride-Based Quantum Dots and Their Optoelectronic Applications

Weng

Ling

et al. 2011

Nano-Micro Lett.

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“…Considering nitride semiconductor-based DBRs, combinations of AlN/GaN, [5][6][7][8][9][10] AlGaN/GaN, [11][12][13][14] AlInN/ GaN, [15][16][17][18] and AlGaN/AlN 19,20) have been reported. AlN/ GaN DBRs have the highest refractive index contrast (Án=n ¼ 0:16) 21) among nitride semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates

Yagi¹,

Kaga²,

Yamashita³

et al. 2012

Jpn. J. Appl. Phys.

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We have demonstrated crack-free 30-pair-AlN/GaN distributed Bragg reflectors (DBRs) grown on AlN templates for the first time. A reasonably high reflectivity of 97.5% was obtained. X-ray diffraction measurements revealed that the AlN templates cause compressive stress in DBRs. At the same time, the AlN/GaN DBRs were found to relax to average AlGaN alloys with AlN mole fractions determined by the thickness ratio of the AlN layer to one pair of AlN and GaN in DBRs regardless of the underlying template, AlN or GaN.

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