2013
DOI: 10.1016/j.matlet.2013.02.090
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Structural and optical characterization of InGaN nanoparticles synthesized at low temperature

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Cited by 5 publications
(7 citation statements)
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“…The thickness of the InGaN film ranges from 500 to 600 nm. The high intensity peak at 2θ = 26° corresponds to the PET substrate, , whereas the peak at 2θ =31.25° indicates h-InGaN. , As the In content increases, the In x Ga (1– x ) N peaks are shifted from that of GaN toward that of InN. Note the c-InGaN peak at 2θ = 40.28° between InN (200) peak at 39.75° and GaN (220) peak at 40.42° with x = 0.1 .…”
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“…The thickness of the InGaN film ranges from 500 to 600 nm. The high intensity peak at 2θ = 26° corresponds to the PET substrate, , whereas the peak at 2θ =31.25° indicates h-InGaN. , As the In content increases, the In x Ga (1– x ) N peaks are shifted from that of GaN toward that of InN. Note the c-InGaN peak at 2θ = 40.28° between InN (200) peak at 39.75° and GaN (220) peak at 40.42° with x = 0.1 .…”
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confidence: 98%
“…Scheme illustrates the steps used to fabricate indium galium nitride nanocubes and their assembly on flexible substrates. The detailed experimental section can be found in the Supporting Information.…”
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