The effective role of time in synthesising InN by chemical method at low temperature

Qaeed, M.A.; Ibrahim, Kamarulzaman; Saron, K.M.A.; Abdullah, Q.N.; Elfadill, Nezar G.; Abud, Saleh H.; Chahrour, Khaled M.

doi:10.1007/s10854-014-1737-1

Cited by 2 publications

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“…In the Ga-rich samples, all modes are close to those of bulk GaN (LO) = 733 cm −1 , TO = 566 cm −1 , 18,28 and approach the frequency values of bulk InN, which are A1(LO) = 585 cm −1 and TO = 455.7 cm −1 . 29 Figure 3b shows that this feature is also shifted to lower frequencies upon increasing the indium content, 28,30 in agreement with the PL and XRD results.…”

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Low-Temperature Solution-Processed Flexible Solar Cells Based on (In,Ga)N Nanocubes

Qaeed

Ibrahim

Saron

et al. 2014

ACS Appl. Mater. Interfaces

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Indium gallium nitride nanocubes were syntheized via a low-temperature chemical route. Energy-dispersive X-ray spectroscopy and X-ray diffraction analyses confirmed the successful fabrication of (In,Ga)N with various indium mole fractions. The bandgap of the material was tunded as a function of the indium content. The fabricated nanocubes showed a deep level photoluminescence emission at 734 nm as well as in the visible region at 435-520 nm. The Hall effect measurements showed the hole concentration to constantly increase from 6.2 × 10(16) to 2.3 × 10(18) cm(-3), while the hole mobility to decrease from 0.92 to 0.1 cm(2) /(V s) as the doping ratio increases from 0.005 to 0.025 cm(-3). The solar cell device made of nanocubes film containing 0.4 indium on flexible substrates showed a short-circuit current density of 12.47 mA/cm(2) and an open-circuit voltage (Voc) of 0.48 V with 54% fill factor. The relationship between Voc and indium content in the fabricated films was also investigated.

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