Electroluminescence from nitrogen doped ZnO nanoparticles

Abstract

The first light emitting diodes using nitrogen doped ZnO nanoparticles (NPs) coated film on GZO have been demonstrated. This device showed diode characteristics in I ‐V measurement and near band edge UV electroluminescence (EL) was observed at the forward voltage of over 3 V. Only near band edge emission was observed in the EL spectrum while PL spectrum has a defect peak. This indicates the efficient exciton recombination was occurred due to the injection of high concentration holes and electrons into the NPs. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Effects of Thermal Pressing on ZnO Nanoparticle Layers Deposited by Drop Casting

“…3 in Ref. [8], NPs with surface defect passivation) showed a signal reduction in the same range. NP formation conditions in Ref.…”

“…NP formation conditions in Ref. [8] were not exactly similar to those used in this study but exploited an identical gas evaporation method. Therefore, the signal observed between 400 and 600 nm in Fig.…”

“…ZnO NPs were synthesized by arc-discharge-mediated gas evaporation [8] using dry air at 610 Torr and an arc current of 30 A. The obtained NPs (0.1 g) were dispersed in water (20 g) by ultrasonic homogenization (150 W, 3 min).…”

p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

“…Thus, the rectifying behavior shown in Figure 4(a) was confirmed to be obtained from the pn-junction structure. However, the leakage current in the reverse bias region was relatively high; in synthesizing the p-type ZnO-NPs, an inhomogeneous arc plasma density distribution may have caused the formation of fewer nitrogen-doped or n-type NPs, whose possibility was discussed in [21]. One possible reason for the leakage current in the reverse bias region is the existence of n-type NPs in the p-type layer.…”

“…Fujita et al [21] reported pn-junction-type nearultraviolet (UV) LEDs using these NPs on Ga-doped ZnO (GZO) films. These results suggest that doped nitrogen atoms are incorporated into oxygen sites, acting successfully as acceptors [21][22][23][24][25]. By regulating the conditions of the gasevaporation method, ZnO-NPs with n-type conductivity can also be obtained [20].…”