We have investigated zeta potential measurements in order to estimate the polarization of zinc oxide (ZnO) and found that the sign and time dependence of zeta potential for ZnO{0001} wafers depend on their polarity, which is caused by an accumulation and a chemisorption of H+ or OH− counterions. The −c polarity of ZnO films on both Al2O3
and (0001) substrates was confirmed by zeta potential measurements. X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED) showed that the zeta measurements do not significantly degrade the film structure and surface morphology. These results should allow for the non-destructive determination of polarity at a lower cost and with a more understandable profile than that determined by conventional physical methods.
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