Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)

Tao, Xutang; Mo, Chunlan; Liu, Junlin; Zhang, Jianli; Wang, Xiaolan; Wu, Xiaoming; Xu, Ling; Ding, Jie; Wang, Guang-xu; Jiang, Fengyi

doi:10.1088/0256-307x/35/5/057303

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…As the current density increases to 7.5 A cm −2 , P3 appears at a shorter wavelength approximately Although P4 appears at higher current density compared to P3, its intensity increases much faster and even exceeds P3. In view of the possible luminous position of LEDs, we believe that P4 comes from InGaN/GaN SLs, as demonstrated in our previous work [24]. Furthermore, for the InGaN SLs, its indium composition is about 6% analyzed by the HRXRD.…”

Section: K T 100ksupporting

confidence: 59%

Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits

Liao

Wang

et al. 2020

Semicond. Sci. Technol.

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The low-temperature GaN cap layer was designed after quantum wells for the V-pits contained InGaN-based green light-emitting diodes (LEDs). It is found that the LEDs' performances are greatly improved with a thicker cap layer. The indium distribution in InGaN/GaN multiple quantum wells (MQWs) becomes more homogeneous. The quality of interface between the quantum well and quantum barrier is promoted, and the carrier confinement effect is enhanced. Thereby the external quantum efficiency (EQE) increases at high current density. However, the sample with a relative thicker cap layer exhibits the lower EQE at low current density, which is attributed to there being more defects at the upper interface of QWs, and the increased probability of carriers meeting at these non-radiative recombination centers. Meanwhile, only the major emission peak emitted from c-plane MQWs can be observed in the electroluminescence spectrum of 100 K, and other emission peaks are hardly visible, which indicates that the sample with the thicker cap has better carrier transport performance.

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Section: K T 100ksupporting

confidence: 59%

Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits

Liao

Wang

et al. 2020

Semicond. Sci. Technol.

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“…4(d), there are five directions for holes' injection: (I 1 ) injection into c-plane QWs through the flat c-plane region, (I 2 ) injection into c-plane QWs via the sidewall of V-pits, (I 3 ) injection into QWs of sidewall of V-pits and partaking in radiative recombination, (I 4 ) non-radiatively recombination at dislocations in V-pits, (I 5 ) injection through the sidewall of the V-pits and recombination in SLs radiatively. [22,23] According to the transport path of holes, P 1 is the main emission peak of the c-plane MQW, whose wavelength is around 550 nm at typical 35 A/cm 2 and shows a blue-shift with current density increasing. As for the shortwavelength emission, it can be seen clearly that P 2 appears at about 500 nm (35 A/cm 2 ) and P 3 with a shorter wavelength for about 445 nm (35 A/cm 2 ).…”

Section: Resultsmentioning

confidence: 99%

Aging mechanism of GaN-based yellow LEDs with V-pits*

Zhang¹,

Fang²,

Wang³

et al. 2019

Chinese Phys. B

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GaN-based yellow light-emitting diodes (LEDs) on Si substrates are aged at a direct current density of 50 A/cm2 for 500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.

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“…A common problem discussed by researchers looking at red InGaN is the existence of parasitic emission at undesired wavelengths. Generally, this is blue emission, and much research has surrounded its origin and mitigation [23][24][25]. Unfortunately, there does not seem to be consensus about the origin or the nature of these blue peaks which may indicate that it's a complicated problem with a variety of potential sources and mitigation strategies.…”

Section: Electroluminescence and External Quantum Efficiencymentioning

confidence: 99%

Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon

et al. 2022

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Achieving high quantum efficiency in long-wavelength LEDs has posed a significant challenge to the solid-state lighting and display industries. In this article, we use V-defect engineering as a technique to achieve higher efficiencies in red InGaN LEDs on (111) Si through lateral injection. We investigate the effects of superlattice structure on the V-defect distribution, the electroluminescence properties, and the external quantum efficiency. Increasing the relative thickness of In in the InGaN/GaN superlattice and the total superlattice thickness correlate with a reduction of active region defects and increased external quantum efficiencies. The highest measured on-chip EQE was 0.15% and based on Monte-Carlo ray tracing simulations for light extraction we project this would correspond to a flip-chip EQE of ~2.5%.

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Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)

Cited by 7 publications

References 23 publications

Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits

Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits

Aging mechanism of GaN-based yellow LEDs with V-pits*

Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon

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