Electroluminescence from ZnO nanoparticles/organic nanocomposites

Abstract

The authors report ultraviolet electroluminescence from ZnO nanoparticle-based devices prepared by the phase-segregation technique. The conditions for phase segregation are investigated using confocal microscopy. With proper parameters for phase segregation, the ZnO nanoparticles and N , NЈ-diphenyl-N , NЈ-bis͑3-methylphenyl͒-1,1Ј-biphenyl-4 , 4Ј-diamine: poly͑methyl methacrylate͒ can be separated into two layers upon spin-coating process. The method allows electrons and holes to recombine in the ZnO nanoparticles. The I-V curve shows stable and excellent rectification. For the device with 90 nm ZnO nanoparticles, it exhibits a very narrow spectrum with a peak at 392 nm and no defect-related emission. The emission peak well corresponds to the ZnO band-gap energy.

Optical and Dynamic Properties of Undoped and Doped Semiconductor Nanostructures

“…Electroluminescence has been reported in various nanoparticles including Si [176], ZnO [177], and CdSe/CdS core/shells [178]. With a semiconductor polymer poly(N-vinylcarbazole) (PVK) doped with CdSe/CdS core-shell semiconductor quantum dots (QDs), white light emission was observed and attributed to the incomplete energy and charge transfer from PVK to CdSe/CdS core-shell QDs.…”

Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography

“…³ÎÇAEÑÄÂÕÇÎßÐÑ, ÑÒÕËÚÇÔÍËÇ ÔÄÑÌÔÕÄ ÚÂÔÕËÙ ÏÑÉÐÑ ËÊÏÇÐâÕß AEÎâ ÓÂÊÐÞØ ÒÓËÏÇÐÇÐËÌ Ê ÔÚÈÕ ËÊÏÇÐÇÐËâ ËØ ÓÂÊÏÇÓÂ Ë ×ÑÓÏÞ. ÎâÇÕÔâ [191,192] ÔÑÑÕÐÑÛÇÐËÇÏ [229,230],  àÎÇÍÕÓÑÎáÏËÐÇÔÙÇÐÙËâ ì AEÎâ ÚÂÔÕËÙ Si [231], ZnO [232], CdSe/CdS [233]. ËÉÇ, Ä ÓÂÊAEÇÎÂØ 7.1 ë 7.5, ÏÞ ÓÂÔÔÏÑÕÓËÏ ÐÇÍÑÕÑÓÞÇ ÂÍÕÖÂÎßÐÞÇ ÒÓËÏÇÐÇÐËâ ÐÂÐÑÚÂÔÕËÙ, ÐÂÐÑÏÂÕÇÓËÂÎÑÄ Ë ÐÂÐÑÔÕÓÖÍÕÖÓ.…”

Ultraviolet electroluminescence from zinc oxide nanorods/deoxyribonucleic acid hybrid bio light-emitting diode

“…Its bandgap is 3.37 eV at room temperature and the excitonic binding energy is high, ∼60 meV. 2 Free excitonic recombination, which is more efficient than the free electron-hole recombination can, therefore, easily produce UV electroluminescent emission. However, the main disadvantage of using ZnO for the fabrication of UV LED is that even by using nanostructures, the band edge UV emission remains unchanged at 3.37 eV and deeper UV emission is not possible.…”