Electroluminescence in Amphoteric Silicon-Doped GaAs Diodes. II. Transient Response

Byer, N. E.

doi:10.1063/1.1659079

Cited by 23 publications

(4 citation statements)

References 11 publications

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“…Further, at large currents, light emission from the entire p-region has been observed (10,12). Explanation of these properties is based on a model developed through studies of photoluminescence in n-and p-type bulk GaAs: Si material (15-18) and of the amphoteric LED's themselves (10)(11)(12)(13)(14). During the growth of the epitaxial p-layer of the device, a lower growth temperature is used so that Si will substitute for As and act as an acceptor rather than for Ga which produces the donor activity in the n-layer.…”

Section: Device Theorymentioning

confidence: 99%

“…This level is assumed to follow the fluctuations in the valence band. This "wavy band" model has been used successfully by Byer (10,11) and Redfield et al (18) to explain the properties of amphoterically St-doped GaAs LED's. At low currents, only the deepest tail states in the conduction and valence bands are filled.…”

Section: Device Theorymentioning

confidence: 99%

“…The macroscopic surface imperfections which are a major problem to the attainment of such surfaces are pits and hillocks. The origin of these defects has been investigated by a number of workers using the Ga/AsC1JH2 (1-4) and Ga/ AsHJHC1 (5)(6)(7)(8)(9)(10)(11) growth systems in relation to growth parameters. It has been reported that the surface morphologies depend strongly on the deposition temperature (4, 10), the gas phase stoichiometry (7,(9)(10)(11), the substrate orientation (1,6), the oxygen contamination of gas stream and the dirt (2, 5), and the substrafe preparation (5).…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

Barnes¹

1977

J. Electrochem. Soc.

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The effects of gamma irradiation on the light intensity, total current, spectral characteristics, and radiative decay time as a function of applied voltage at 76~ have been studied in amphoterically Si-doped GaAs lightemitting diodes (LED's). At low voltages, both the total current, I, and radiative current are due to space charge recombination with the result that, at constant voltage, I increases with gamma dose, r while the light intensity, L, remains constant. At higher voltages, where the radiative current is due to recombination in the neutral p-region, L decreases sharply with r at constant voltage. This rapid decrease is due, in part, to the presence of space-charge limited current (SCLC) flow which also leads to a decrease in I with r at constant high voltage. Spectral measurements show that the emission peak energy is proportional to junction voltage at low currents suggesting radiative tunneling of carriers in deep tail states. In accordance with the "wavy band" model t'or these diodes, tail states are also responsible for the observed inverse dependence of radiative decay time on diode current and emitted photon energy. The long lifetimes in the localized deep tail states lead to a radiation damage effect contrary to that observed for diffusion length-associated lifetimes; that is, the longest lifetimes are least affected by gamma irradiation.

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Section: Device Theorymentioning

confidence: 99%

Section: Device Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

Barnes¹

1977

J. Electrochem. Soc.

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“…Calculated values for radiative lifetime are inherently limited by the accuracy and applicability of the model assumed and are further complicated when the effects of impurities (deliberate doping or traps) must be included, as is most dramatically illustrated by the case of the deeper Si acceptor in GaAs 5,6 or when one must consider the case of a p-n junction.…”

Section: Introductionmentioning

confidence: 99%

Optical Phase-Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double-Surface and Surface-Free Epitaxial GaAs

Keune

Holonyak

Burnham

et al. 1971

Journal of Applied Physics

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By the optical phase-shift technique measurements are made (77°K) of excess carrier lifetimes on ``surface-free'' thin layers of lightly doped n- and p-type GaAs, and on damage-free vapor-grown thin blades. The nonradiative losses due to surface recombination are minimized by selectively photoexciting the center layer of a GaAlAs(n+)/GaAs(n or p)/GaAs(n+) structure through the first layer, which acts as a window and as a confining barrier of excess carriers. The spontaneous carrier lifetime (δn∼1016/cm3) for surface-free epitaxial layers of n-type GaAs (ND-NA=2.42×1015 cm−3) and for p-type GaAs (NA-ND=4.64× 1016 cm−3) at 77°K is 4.1 and 4.3 nsec, respectively, which is to be compared with a value of 1.9 nsec for a thin damage-free vapor-grown blade not seeded on a substrate.

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Efficient GaAsGa1−xAlxAs heterostructure electroluminescent diodes

Ulmer¹

1971

Solid-State Electronics

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Electroluminescence in Amphoteric Silicon-Doped GaAs Diodes. II. Transient Response

Cited by 23 publications

References 11 publications

The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

Optical Phase-Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double-Surface and Surface-Free Epitaxial GaAs

Efficient GaAsGa1−xAlxAs heterostructure electroluminescent diodes

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