Electroluminescence in Si/SiO2 layer structures

Heikkilä, L.; Kuusela, Tom; Hedman, Hannu‐Pekka

doi:10.1063/1.1338986

Cited by 37 publications

(21 citation statements)

References 25 publications

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“…(i) The band gap expands with reducing particle size, which gives rise to the blueshift in the PL and photo-absorbance (PA) spectra of nanometric semiconductors such as Si oxides [73,478,479,480], IIIeV [481] (GaN [482,483], InAs [484], GaP, and InP [485,486]) and IIeVI (CdS [487e489], ZnS [490], CdSe [491,492], ZnTe [493], CdTe/CdZnTe [494]) compounds. (ii) The energies of PL and PA involve the contribution from electronephonon coupling that shifts the optical band gap E G from the true E G by the well-known value of Stokes shift arising from electronephonon interaction that also changes with solid size [47].…”

Section: Introductionmentioning

confidence: 99%

Size dependence of nanostructures: Impact of bond order deficiency

Sun

2007

Progress in Solid State Chemistry

826

717

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Section: Introductionmentioning

confidence: 99%

Size dependence of nanostructures: Impact of bond order deficiency

Sun

2007

Progress in Solid State Chemistry

826

717

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“…2. According to the previous studies on Si/ SiO 2 LEDs, 19,20 the thickness of the buried silicon dioxide is estimated to be less than 100 nm. Figure 3 shows the Si/ SiO 2 LED's basic characteristics including I-V ͑current-voltage͒, L-V ͑light intensity-voltage͒, and L-I ͑light intensity-current͒ curves.…”

mentioning

confidence: 99%

“…A peak emission wavelength at 575 nm was observed to be independent of the applied current, with a broad spectrum of the visible wavelengths similar to the characteristics reported for the Si/ SiO 2 interface LED. 19,20 Several reports have been made to tailor emission wavelengths of Si/ SiO 2 LEDs. Semiconductor nanoparticles introduced between a FIB-cut gap modified the emission wavelength.…”

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confidence: 99%

Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

Hoshino

Rozanski

Bout

et al. 2008

Applied Physics Letters

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We describe optical and topographic imaging using a light emitting diode monolithically integrated on a silicon probe tip for near-field scanning optical microscopy (NSOM). The light emission resulted from a silicon dioxide layer buried between a phosphorus-doped N+ silicon layer and a gallium-doped P+ silicon region locally created at the tip by a focused ion beam. The tip was employed in a standard NSOM excitation setup. The probe successfully measured optical as well as topographic images of a chromium test pattern with imaging resolutions of 400 and 50nm, respectively. The directional resolution dependence of the acquired images directly corresponds to the shape, size, and polarity of the light source on the probe tip. To our knowledge, this report is the first successful near-field imaging result directly measured by such tip-embedded light sources.

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“…It should be noted that electroluminescence from defects and states at or near the Si/SiO 2 interface have been observed to emit a wideband spectrum as well, peaking near a photon energy of 1.9 eV [15,16]. These results were, however, very much dependent on the specific device structure and materials, as well as processing technique.…”

Section: Discussion Of Resultsmentioning

confidence: 99%

Temperature characteristics of hot electron electroluminescence in silicon

Plessis¹,

Wen²,

Bellotti³

2015

Opt. Express

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Emission spectra of avalanching n + p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. The temperature coefficients of the emission rates at different photon energies were determined. Below a photon energy of 1.35 eV the temperature coefficient of emission was positive, and above 1.35 eV the temperature coefficient was negative. Two narrowband emissions were also identified from the temperature characterization, namely an enhanced positive temperature coefficient at 1.15 eV photon energy, and an enhanced negative temperature coefficient at 2.0 eV. Device simulations and Monte Carlo simulations were used to interpret the results. 5848-5856 (1992). 13. K. Xu and G. P. Li, "A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal-oxide-semiconductor technology," J. Appl. Phys. 113, 103106 (2013). 14. S. Tam, F-C. Hsu, C. Hu, R. S. Muller and P. K. Ko, "Hot-electron currents in very short channel MOSFET's," IEEE Electron Device Lett. 4(7), 249-251 (1983). 15. J. Yuan and D. Haneman, "Visible electroluminescence from native SiO2 on n-type Si substrates," J. Appl.Phys. 86(4), 2358-2360 (1999). 16. L. Heikkilä, T. Kuusela and H.-P. Hedman, "Electroluminescence in Si/SiO2 layer structures," J. Appl. Phys. 89(4), 2179-2184 (2001). 17. A. M. Emel'yanov, N. A. Sobolev, T. M. Mel'nikova and S. Pizzini, "Efficient silicon light-emitting diode with temperature-stable spectral characteristics," Semiconductors 37(6), 730-735 (2003).

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Electroluminescence in Si/SiO2 layer structures

Cited by 37 publications

References 25 publications

Size dependence of nanostructures: Impact of bond order deficiency

Size dependence of nanostructures: Impact of bond order deficiency

Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

Temperature characteristics of hot electron electroluminescence in silicon

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