Temperature characteristics of hot electron electroluminescence in silicon

Abstract

Emission spectra of avalanching n + p junctions manufactured in a standard CMOS technology with no process modifications were measured over a broad photon energy spectrum ranging from 0.8 eV to 2.8 eV at various temperatures. The temperature coefficients of the emission rates at different photon energies were determined. Below a photon energy of 1.35 eV the temperature coefficient of emission was positive, and above 1.35 eV the temperature coefficient was negative. Two narrowband emissions were also identified from the temperature characterization, namely an enhanced positive temperature coefficient at 1.15 eV photon energy, and an enhanced negative temperature coefficient at 2.0 eV. Device simulations and Monte Carlo simulations were used to interpret the results. 5848-5856 (1992). 13. K. Xu and G. P. Li, "A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal-oxide-semiconductor technology," J. Appl. Phys. 113, 103106 (2013). 14. S. Tam, F-C. Hsu, C. Hu, R. S. Muller and P. K. Ko, "Hot-electron currents in very short channel MOSFET's," IEEE Electron Device Lett. 4(7), 249-251 (1983). 15. J. Yuan and D. Haneman, "Visible electroluminescence from native SiO2 on n-type Si substrates," J. Appl.Phys. 86(4), 2358-2360 (1999). 16. L. Heikkilä, T. Kuusela and H.-P. Hedman, "Electroluminescence in Si/SiO2 layer structures," J. Appl. Phys. 89(4), 2179-2184 (2001). 17. A. M. Emel'yanov, N. A. Sobolev, T. M. Mel'nikova and S. Pizzini, "Efficient silicon light-emitting diode with temperature-stable spectral characteristics," Semiconductors 37(6), 730-735 (2003).

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