Schottky contacts are produced on n‐type ZnSiP2 crystals by means of electroless deposition of Ni or Au as well as by vacuum evaporation of Au. The barrier heights are determined by photoemission and C–U measurements. The analysis of the I–U characteristic and its temperature dependence yields information about the dominat current mechanisms. The Ni‐contacts show a nearly ideal Schottky behaviour, the charge carrier transport is caused by thermionic‐field emission at low temperature and by thermionic emission at room temperature. The average barrier height is 0.93 eV for Ni and 1.43 eV for Au on ZnSiP2. The deviations of the vacuum evaporated Au‐contacts from the Schottky behaviour are explained by a thin insulating interlayer.