Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

Brunhes, T.; Boucaud, P.; Sauvage, S.; Aniel, F.; Lourtioz, Jean‐Michel; Hernandez, C.; Campidelli, Y.; Kermarrec, O.; Bensahel, D.; Faini, G.; Sagnes, I.

doi:10.1063/1.1308526

Cited by 67 publications

(28 citation statements)

References 15 publications

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“…The localization of electrons in the Ge/Si interface is mainly determined by the Coulomb interaction, i.e., by the indirect exciton binding energy, which is constant and equals 25 meV [36]. The latter value is close to kT at room temperature, making an observation of the QDSL band at room temperature quite difficult [8][9][10][11][12][13]26]. In our highly strained Sb-doped QDSLs the potential well for electrons is deeper due to the tensile strain-induced lowering of the conduction band.…”

Section: (A)mentioning

confidence: 99%

“…Although arrays of self-assembled Ge islands grown by the StranskiKrastanow mode on silicon have been studied quite intensively, just a few research teams have reported about PL [8,9] and electroluminescence (EL) data [10][11][12][13]. Probably, due to the low emission intensity, the internal quantum efficiency (QE) measured at room temperature for Ge/Si light emitting diode (LED) at 1.42 lm has been reported only in two studies with the following results: 5 · 10 -4 % [11] and 0.015% [13].…”

Section: Introductionmentioning

confidence: 99%

“…The authors of Ref. [10] measured the EL signal from Ge/Si QD array up to 290 K. It is noteworthy, that the QDSL EL intensity was maximal at 225 K.…”

Section: (A)mentioning

confidence: 99%

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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

et al. 2006

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The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4-1.8 lm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 lm.

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Section: (A)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

et al. 2006

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“…The study of Ge(Si) islands luminescent properties also has both the fundamental and applied aspects. The applied interest is associated with a signal in the wavelength range 1.3-1.7 µm being observed up to room temperatures in the luminescence spectra of structures with Ge(Si)/Si(001) islands [4,5]. Fundamental investigations of the Ge(Si) islands luminescence are aimed to reveal the features of the radiative recombination of charge carriers in nanostructures based on the indirect band semiconductors, particularly of the influence of charge carriers confinement on their recombination [6,7].…”

Section: Introductionmentioning

confidence: 99%

Narrow photoluminescence peak from Ge(Si) islands embedded between tensile‐strained Si layers

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Baydakova

et al. 2011

Phys. Status Solidi (c)

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The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self‐assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile‐stained Si layers was studied. This line appears due to the II‐type optical transition between the holes localized in islands and the electrons confined in tensile‐strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion‐induced smearing of strained Si layer above the islands. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Bulk silicon in this wavelength range is transparent, which makes it possible to use waveguides on its basis and opens new avenues for the integration of optical and electronic components on one silicon substrate. In the last few years, various teams [6][7][8][9] reported on successes in observing the electroluminescence (EL) at room temperature from structures with Ge(Si) islands. The best results in the region of formation of light-emitting diode structures with Ge(Si) islands in the wavelength range of 1.3-1.9 µ m were obtained in [10], where the EL external quantum efficiency amounted to ~0.04% at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature

et al. 2009

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-The electroluminescence (EL) of multilayered p -i -n structures with the self-assembled Ge(Si)/Si(001) islands are investigated. It is found that the structures with islands grown at 600 ° C have the highest intensity of the electroluminescence signal at room temperature in the wavelength range of 1.3-1.55 µ m. The annealing of structures with the Ge(Si) islands leads to an increase in the EL-signal intensity at low temperatures and hampers the temperature stability of this signal, which is related to the additional Si diffusion into islands during annealing. The found considerable increase in the electroluminescence-signal intensity with the thickness of the separating Si layer is associated with a decrease in the elastic stresses in the structure with an increase in this layer's thickness. The highest EL quantum efficiency in the wavelength range of 1.3-1.55 µ m obtained in investigated structures amounted to 0.01% at room temperature.

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Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition

Cited by 67 publications

References 15 publications

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

Narrow photoluminescence peak from Ge(Si) islands embedded between tensile‐strained Si layers

Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature

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