Electroluminescent cooling in intracavity light emitters: modeling and experiments

Sadi, Toufik; Kivisaari, Pyry; Tiira, Jonna; Radevici, Ivan; Haggrén, Tuomas; Oksanen, Jani

doi:10.1007/s11082-017-1285-z

Cited by 17 publications

(20 citation statements)

References 22 publications

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“…2(c). 14,15 The shoulder of the LED's J -V curve observed from experimental data is fully reproducible with the EC in Fig. 2(c).…”

supporting

confidence: 72%

“…The g CQE ¼ 0.70 reported here exceeds the CQE records (g CQE ¼ 0.63) we have reported previously 14,15 and also slightly exceeds the highest EQE g EQE ¼ 0.68 reported for GaAs based LEDs in the literature. 3 While directly comparing the EQE of established GaAs LEDs and our devices' CQE is not straightforward, we nevertheless point out that they both provide a lower limit for the IQE; thus, our result increases the directly measured lower bound for the IQE of GaAs based LEDs.…”

supporting

confidence: 57%

“…As such, the DDS structure is designed to act as an intermediate research prototype for directly probing and optimizing the efficiency and energy transport in the structure using the built-in PD, providing the necessary additional insight and evidence on the feasibility of both conventional EL cooling and thermophotonic cooling. 15 In this paper, we analyze the performance of selected DDSs, showing that the included LED junctions potentially exhibit the highest directly measured quantum efficiencies of GaAs based LEDs. Based on a separate loss analysis, our results additionally suggest that the power conversion efficiency of our LED components already exceeds the threshold of EL cooling by at least 10%.…”

mentioning

confidence: 99%

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Thermophotonic cooling in GaAs based light emitters

Radevici

Tiira

Sadi

et al. 2019

Applied Physics Letters

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Fundamental thermodynamic considerations reveal that efficient emission from an electrically injected light emitting diode (LED) can lead to the cooling of the device. This effect, known as electroluminescent (EL) cooling, has been identified decades ago, but it has not been experimentally demonstrated in semiconductors at practical operating conditions due to the extreme requirements set for the efficiency of the light emission. To probe the conditions of EL cooling in GaAs based light emitters, we have designed and fabricated LED structures with integrated photodiodes (PDs), where the optically mediated thermal energy transport between the LED and the PD can be easily monitored. This allows characterization of the fundamental properties of the LED and a path for eliminating selected issues encountered in conventional approaches for EL cooling, such as the challenging light extraction. Despite several remaining nonidealities, our setup demonstrates a very high directly measured quantum efficiency of 70%. To characterize the bulk part of the LED, we also employ a model for estimating the power conversion efficiency (PCE) of the LED, without the contribution of non-fundamental nonidealities such as photodetection losses. Our results suggest that the PCE of the LED peaks at around 105-115%, exceeding the 100% barrier required to reach the EL cooling regime by a clear margin. This implies that the LED component in our device is in fact cooling down by transporting thermal energy carried by the emitted photons to the PD. This provides a compelling incentive for further study to confirm the result and to find ways to extend it for practically useful EL cooling.Published under license by AIP Publishing. https://doi.

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“…2(c). 14,15 The shoulder of the LED's J -V curve observed from experimental data is fully reproducible with the EC in Fig. 2(c).…”

supporting

confidence: 72%

supporting

confidence: 57%

mentioning

confidence: 99%

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Thermophotonic cooling in GaAs based light emitters

Radevici

Tiira

Sadi

et al. 2019

Applied Physics Letters

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“…Recently, we suggested that a laterally doped AlGaAs/GaAs DDCT-LED structure (Myllynen et al 2018) can eliminate the non-radiative surface recombination that can be quite detrimental for high efficiency III-As LEDs (Sadi et al 2018a). Our results suggested that the excellent performance of the DDCT-LEDs could be particularly useful in improving the efficiency of double diode structures (DDSs) (Sadi et al 2018a, b) that we are using to study electroluminescent cooling (ELC) (Santhanam et al 2013;Lee and Yen 2012;Chen et al 2017).…”

Section: Introductionmentioning

confidence: 72%

Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping

2019

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Diffusion-driven charge transport (DDCT) in III-V light-emitting diodes (LEDs) can enable unconventional optoelectronic devices and functionality by fundamentally changing device design and the current injection principle. In our recent study, an AlGaAs/GaAs DDCT-LED consisting of an array of lateral heterojunctions was studied for large-area applications at high powers. Here, we investigate the current spreading and recombination uniformity of a modulation doped GaInP/GaAs DDCT-LED. In particular, we analyze how the background doping of the lower GaInP cladding layer (CL) and the GaAs substrate changes the carrier distribution within the active region of the device. Our charge transport simulations based on the drift-diffusion current and continuity equations predict that modulation doping by a p-doped CL provides much higher recombination uniformity at high powers compared to an n-doped CL. Most importantly, improved current spreading is achieved while maintaining excellent device performance.

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“…As conventional LEDs and solar cells are becoming commoditized, research is being geared towards more sophisticated applications from emerging materials and nanostructures. Examples of this include electroluminescent cooling [3], optical on-chip communication using nanostructure optical interconnects [4], photocatalytic solar fuel production [5], and various nanowirebased devices [6]. However, to speed up the development of new nanophotonic devices, accessible modeling tools are needed where electrical and wave-optical effects are selfconsistently coupled.…”

Section: Introductionmentioning

confidence: 99%

Energy Transport in Lossy Resonators by Optical Admittance Methods

Kivisaari

Partanen

Oksanen

2018

2018 IEEE Photonics Conference (IPC)

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Improved modeling tools are needed for selfconsistent simulation of photon and carrier transport in emerging photonic devices. Here we introduce the method of optical admittances to simplify the calculation of Green's functions and interference effects of energy transport in the recently introduced quantized fluctuational electrodynamics framework. Our approach enables a straightforward analytical method to calculate e.g. the local and nonlocal densities of states in photonic resonators. Furthermore, the resulting wave-optical treatment of emission enhancement and photon recycling can be coupled with drift-diffusion simulations using the so-called interference-exact radiative transfer equations to provide a full-device model of optical and electrical energy transport in arbitrary multilayer structures. We expect the presented framework to enable detailed new studies of emerging photonic devices based on e.g. thin-film technology.

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Electroluminescent cooling in intracavity light emitters: modeling and experiments

Abstract: This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail.

Cited by 17 publications

References 22 publications

Thermophotonic cooling in GaAs based light emitters

Thermophotonic cooling in GaAs based light emitters

Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping

Energy Transport in Lossy Resonators by Optical Admittance Methods

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