Electromechanical Transconductance Properties of a GaN MEMS Resonator With Fully Integrated HEMT Transducers

Faucher, M.; Cordier, Y.; Werquin, M.; Buchaillot, L.; Gaquière, C.; Théron, D.

doi:10.1109/jmems.2011.2179010

Cited by 24 publications

(19 citation statements)

References 30 publications

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“…Using he mature silicon res as well as futotal thickness of is 1.8 μm, with a n on top. evices by removUnlike [8] and [9], onator active area; the homogeneity s used for source wed by 30 seconds 0 ˚C. Next, Ni/Au ottky contact (for ottky contact (for y, vias were made yer, which is then ion of the starting are schematically scope (SEM) im- MT is shown in th its Butterworth C m , and L m ).…”

Section: Fabricationmentioning

confidence: 99%

“…g a , g mb , and the top gate DC voltage, as will be acoustic transconductance, which h value and peaks at the resonance f the broad-band electrical back gate t ing as a feed-through floor in the Y 2 and L are the respec length, is electron mobility, and The interface charge sheet density cr . , , , and are the strain tensors lateral and thickness-mode piezoele tively [8]. The drain current thus cha by:…”

Section: Fabricationmentioning

confidence: 99%

“…An AlGaN/GaN Resonant HEMT was demonstrated in [8] and was used to excite the flexural-mode resonance of a beam with frequencies in lower megahertz range. In this work, we propose a four-terminal RB-HEMT that uses a back gate to launch acoustic wave into the vibrating body, exciting its thickness-mode resonance.…”

Section: Introductionmentioning

confidence: 99%

“…We first proposed this structure in [4]; in this work, we explain the design principle and report the measurement results of fabricated devices in detail. Unlike [8], where flexural resonance modes are excited by a HEMT actuator placed at one end of a suspended beam and read out through a separate HEMT at the other end, the proposed device is more compact, has higher electromechanical coupling using the thickness-mode (e 33 ) piezoelectric coefficient, and can operate at higher frequencies.…”

Section: Introductionmentioning

confidence: 99%

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HEMT-based read-out of a thickness-mode AlGaN/GaN resonator

Ansari

Rais‐Zadeh

2013

2013 IEEE International Electron Devices Meeting

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A multi-gigahertz AlGaN/GaN resonator is introduced, where the fundamental thickness-mode resonance at 2.1 GHz is excited exhibiting a quality factor (Q) of 105. For the first time, acoustic strain in the vertical direction is excited and sensed through a two-dimensional electron gas (2DEG), induced at the AlGaN/GaN interface. The 2DEG sheet is used as the bottom electrode for piezoelectric actuation, as well as the transistor conduction channel for acoustic sensing. In this design, acoustic resonance is sensed by modulation of the HEMT drain current (I D ); thus, the transistor is biased in the linear region of operation. Here, we study the dependency of the acoustic transconductance on the readout HEMT biasing and show that the read-out HEMT senses the drain current modulation only when the 2DEG channel is not pinched. To use the full potential of the HEMT intrinsic amplification, the transistor needs to be biased in the saturation region, which would require a modified RB-HEMT design.

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Section: Fabricationmentioning

confidence: 99%

Section: Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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HEMT-based read-out of a thickness-mode AlGaN/GaN resonator

Ansari

Rais‐Zadeh

2013

2013 IEEE International Electron Devices Meeting

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“…These tranduction schemes often rely on on-chip integrated signal amplifiers, e.g. single-electron transistors (SET) 31,32 or high-electron-mobility transistors (HEMT) 33,34 to enhance the relatively small electrical signal induced by device displacement, and complicated down-mixing circuits to bypass the bandwidth limitation. 22,26,27,29,30 Such approaches drastically increase the design complexity and very often limit the operating temperatures and applicable areas of NEMS.…”

mentioning

confidence: 99%

Integrated On-Chip Nano-Optomechanical Systems

Diao

Sauer

Hiebert

2017

Int. J. Hi. Spe. Ele. Syst.

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Recent developments in integrated on-chip nano-optomechanical systems are reviewed. Silicon-based nano-optomechanical devices are fabricated by a two-step process, where the first step is a foundry-enabled photonic circuits patterning and the second step involves in-house mechanical device release. We show theoretically that the enhanced responsivity of near-field optical transduction of mechanical displacement in on-chip nano-optomechanical systems originates from the finesse of the optical cavity to which the mechanical device couples. An enhancement in responsivity of more than two orders of magnitude has been observed when compared side-by-side with free-space interferometry readout. We further demonstrate two approaches to facilitate large-scale device integration, namely, wavelength-division multiplexing and frequency-division

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Depletion‐mediated piezoelectric AlGaN/GaN resonators

Ansari

Rais‐Zadeh

2016

Physica Status Solidi (a)

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The electromechanical properties of an acoustic wave propagating in a piezoelectric media can be tuned by modulation of the resistivity of the piezoelectric material. This is readily available in piezoelectric semiconductor materials, wherein acoustic phonons and charge carriers can interact. In this work, we employ epitaxially grown AlGaN/ GaN heterostructures in bulk acoustic wave resonators with Schottky interdigitated transducers biased in the depletion region to study the interaction between piezoelectric strain and depletion charges. By modulating the impedance of the depletion layer upon application of DC voltages, we tune the acoustic properties of bulk-mode resonators and show significant Q enhancement as the result of a depletion force added to the piezoelectric actuation force. Furthermore, we compare the performance of such resonators with pure GaN piezoelectric resonators that have the same geometry but with the AlGaN layer removed. When integrated with AlGaN/GaN HEMTs (located on the acoustic cavity or next to the resonator), such resonators can be used as frequency references in oscillator circuits in radio frequency (RF) blocks or utilized in harsh environment sensing applications.

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Electromechanical Transconductance Properties of a GaN MEMS Resonator With Fully Integrated HEMT Transducers

Cited by 24 publications

References 30 publications

HEMT-based read-out of a thickness-mode AlGaN/GaN resonator

HEMT-based read-out of a thickness-mode AlGaN/GaN resonator

Integrated On-Chip Nano-Optomechanical Systems

Depletion‐mediated piezoelectric AlGaN/GaN resonators

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