2002
DOI: 10.1103/physrevb.65.165312
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Electromechanics of charge shuttling in dissipative nanostructures

Abstract: We investigate the current-voltage (IV) characteristics of a model single-electron transistor where mechanical motion, subject to strong dissipation, of a small metallic grain is possible. The system is studied both by using Monte Carlo simulations and by using an analytical approach. We show that electromechanical coupling results in a highly nonlinear IV-curve. For voltages above the Coulomb blockade threshold, two distinct regimes of charge transfer occur: At low voltages the system behave as a static asymm… Show more

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Cited by 45 publications
(43 citation statements)
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References 16 publications
(30 reference statements)
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“…Electron tunneling is determined by the probabilities P The number of electrons transferred in one cycle will depend on the capacitance, C, of the shuttle, its vibration frequency, and applied voltage, V. Transition to the shuttling regime manifests itself as a sudden increase in the transmitted current. So large change in the current through a shuttle-junction can be associated with the so-called hard excitation of oscillations, 16 which is typical for system with large dissipation.…”
mentioning
confidence: 99%
“…Electron tunneling is determined by the probabilities P The number of electrons transferred in one cycle will depend on the capacitance, C, of the shuttle, its vibration frequency, and applied voltage, V. Transition to the shuttling regime manifests itself as a sudden increase in the transmitted current. So large change in the current through a shuttle-junction can be associated with the so-called hard excitation of oscillations, 16 which is typical for system with large dissipation.…”
mentioning
confidence: 99%
“…Since current through the system is accompanied by charging of the grain, interplay between the Coulomb forces and the mechanical degrees of freedom can lead to self-oscillations of the grain, which in turn, supports charge transport through shuttling of electrons between the leads. Much work, both experimental [5,6,7,8,9] as well as theoretical [4,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24] has been reported in this field.…”
Section: Introductionmentioning
confidence: 99%
“…The mesoscopic force oscillations in nanowires [3][4][5] observed a few years ago is an example of such a phenomenon. Investigations of artificially-made nanomechanical devices, where the interplay between single-electron tunneling and a local mechanical degree of freedom significantly controls the electronic transport, is another line of nanoelectromechanics [6][7][8][9][10][11][12][13][14][15]. For one of the nanomechanical systems of this kind, the self-assembled single-electron transistor, a new electromechanical phenomena -the shuttle instability and a new so-called shuttle mechanism of the charge transport were recently predicted in [12].…”
mentioning
confidence: 99%