Electromigration in thin gold films

Klein, Bernhard

doi:10.1088/0305-4608/3/4/010

Cited by 44 publications

(11 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The subscript i denotes the material, being Au or Pt. All these current densities are below the critical current densities for Au and Pt, which are around 10 10 A m −2 [57] and 10 11 A m −2 [58], respectively. Therefore, any possible combination of heater width and heater spacing will give a resistive that can withstand its operation.…”

Section: Resistive Heater Structure Designmentioning

confidence: 85%

Disposable DNA Amplification Chips with Integrated Low-Cost Heaters †

et al. 2020

View full text Add to dashboard Cite

Fast point-of-use detection of, for example, early-stage zoonoses, e.g., Q-fever, bovine tuberculosis, or the Covid-19 coronavirus, is beneficial for both humans and animal husbandry as it can save lives and livestock. The latter prevents farmers from going bankrupt after a zoonoses outbreak. This paper describes the development of a fabrication process and the proof-of-principle of a disposable DNA amplification chip with an integrated heater. Based on the analysis of the milling process, metal adhesion studies, and COMSOL MultiPhysics heat transfer simulations, the first batch of chips has been fabricated and successful multiple displacement amplification reactions are performed inside these chips. This research is the first step towards the development of an early-stage zoonoses detection device. Tests with real zoonoses and DNA specific amplification reactions still need to be done.

show abstract

Section: Resistive Heater Structure Designmentioning

confidence: 85%

Disposable DNA Amplification Chips with Integrated Low-Cost Heaters †

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Electromigration (EM) is the movement of metal atoms in a conductor due to momentum transfer from electrons impacting the metal atoms in the crystal lattice. This phenomenon was first described by Black et al [8] and has since been studied extensively by many others [9][10][11][12][13][14][15]. Black established a correlation model that relates an EM failure to the current density (J) and temperature (T) as shown in Equation 1.…”

Section: Figure10b: Simulated Outputmentioning

confidence: 99%

“…The reason for this improved EM performance is that nearly all the grain boundaries are perpendicular to the direction of current flow and easy atomic displacement along the grain boundary (in the direction of current flow) is nearly shut down as a displacement mechanism. Al and Au based metal interconnect systems for semiconductors have been studied with reasonably wide ranging values reported for A and E a coefficients (and n when it has not been assumed as 2) [11][12][13][14]. E a has a large influence on the lifetime calculations and in general for interconnect systems relevant to RF-LMDOS devices have typically been reported in the range of 0.6-0.7eV for Al and 0.8-1.0eV for Au systems.…”

Section: Exp ⁄mentioning

confidence: 99%

Intrinsic reliability of RF power LDMOS FETs

Burdeaux

Burger

2011

2011 International Reliability Physics Symposium

View full text Add to dashboard Cite

RF-LDMOS is the dominant RF power device technology in the cellular infrastructure market, having successfully displaced vertical MOSFETs and silicon bipolar transistors in the 1990s. A similar technology shift towards RF-LDMOS is occurring today in adjacent RF power markets such as UHF Broadcast, VHF Broadcast, L-Band and S-Band Radar, and the Industrial/Scientific/Medical markets (MRI, CO2 Laser, synchrotron, etc.). This increasing adoption of RF-LDMOS into these other RF power applications is the direct consequence of continuing progress at improving the intrinsic reliability and application-specific customization of LDMOS device structures.RF power applications, whether cellular infrastructure or the adjacent non-cellular markets, present unique and challenging thermal and electrical environments for the RF power transistor. While the design and architecture of the power amplifier is critically important in defining the stress environment, this presentation will focus on improvements of the intrinsic reliability of RF-LDMOS FETs. The most important of these intrinsic reliability characteristics are Hot Carrier Injection (HCI), Electromigration (EM), and device ruggedness. The stress environment presented to the RF power transistor will be described in detail, including the linkage between the RF stress and these intrinsic reliability metrics. Detailed models have been created to simulate these stresses, and the results of various device design strategies to mitigate these stresses will be presented.5A.2.8 IRPS11-442

show abstract

“…Of course, grain growth is not the sole purpose of electromigration induced microstructure modification. The rate of electromigration is a function of both current density and temperature, [5] each of which can be controlled. For a given current, at any point on the structure, the current density is only determined by the width of the structure, while the temperature reached will depend on the thermal resistance from that point to the silicon substrate.…”

Section: B Microstructure Engineeringmentioning

confidence: 99%

Electromigration: A Unique Tool for Microstructure Engineering in Metal Films

Mohanasundaram¹,

Pratap²,

Ghosh³

2012

IJAPM

View full text Add to dashboard Cite

Abstract-Electromigration has long been studied in the context of interconnect reliability in integrated circuits. It has also been used to create metal electrodes with nanogaps for molecular electronics. Here we report a new application of electromigration as a tool for locally engineering the microstructure of thin metal films. By controlling the level of disorder in the system, electromigration enables us to modify the electrical and electromechanical properties of the film. We have developed and implemented a feedback control algorithm for high precision control of the electromigration process. We have demonstrated the usefulness of the technique by using it to enhance the strain sensitivity of a metal based piezoresistive transducer. This enhancement can be attributed to the change in microstructure of the film which in turn changes the electronic transport mechanism.

show abstract

Electromigration in thin gold films

Cited by 44 publications

References 9 publications

Disposable DNA Amplification Chips with Integrated Low-Cost Heaters †

Disposable DNA Amplification Chips with Integrated Low-Cost Heaters †

Intrinsic reliability of RF power LDMOS FETs

Electromigration: A Unique Tool for Microstructure Engineering in Metal Films

Contact Info

Product

Resources

About