. (2012). Nanostructure-property relations for phase-change random access memory (PCRAM) line cells. Physica status solidi b-Basic solid state physics, 249(10), 1972249(10), -1977249(10), . DOI: 10.1002 Copyright Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. Phase-change random access memory (PCRAM) cells have been studied extensively using electrical characterization and rather limited by detailed structure characterization. The combination of these two characterization techniques has hardly been exploited and it is the focus of the present work. Particularly, for improving the reliability of PCRAM such combined studies can be considered indispensable. Here, weshow results for PCRAM line cells after series of voltage pulses with increasing magnitude are applied, leading to the first minimum sized amorphous mark, maximum amorphous resistance and over-programming, respectively. Furthermore, the crucial effect of electromigration limiting the endurance (cyclability) of the cells is demonstrated.