Electromigration-induced failure in operando characterization of 3D interconnects: microstructure influence

Gousseau, Simon; Moreau, S.; Bouchu, D.; Farcy, A.; Montmitonnet, Pierre; Inal, Karim; Bay, François; Zelsmann, M.; Picard, E.

doi:10.1016/j.microrel.2015.05.019

Cited by 10 publications

(3 citation statements)

References 18 publications

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“…This approach provides a robust tool for identifying potential failure points. Gousseau et al [12] conducted research using electron backscattered diffraction and in situ scanning electron microscopy to investigate the impact of the microstructure of TSV-Cu on the formation and growth of electromigration-induced voids. Chen Zhaohui [13], through the establishment of an electromigration simulation model, conducted a comprehensive and systematic study on the reliability of silicon TSV electromigration.…”

Section: Introductionmentioning

confidence: 99%

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Gong,

Xie,

Chen

et al. 2023

Crystals

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The combined use of Through Silicon Via (TSV) and metal lines, referred to as TSV-metal lines, is an essential structure in three-dimensional integrated circuits. In-depth research into the electromigration failure mechanism of TSV and the microstructure evolution can serve as theoretical guidance for optimizing three-dimensional stacking. This article conducted electromigration experiments on TSV-metal line structural samples at current densities of 1.0 × 105 A/cm2, 5 × 105 A/cm2, and 1 × 106 A/cm2. Additionally, Electron Back Scattered Diffraction (EBSD) technology was employed to systematically investigate the microstructural evolution of the TSV-metal line structure profiles before and after the application of electrical testing. The results indicate that the current induces a change in the crystal orientation at the TSV-metal interface (TSV/metal interface) and the bottom metal line. This phenomenon notably depends on the initial angle between the grain orientation and the current flow direction. When the angle between the current direction and the grain orientations [001] and [010] is relatively large, the crystals are more likely to deviate in the direction where the angle between the grain orientation and the current is smaller. This is because, at this point, the current direction is precisely perpendicular to the <100> crystal plane family, where the atomic density is lowest, and the energy required for electron transport is minimal. Therefore, the current readily rotates in the direction of this crystal orientation. Before the electromigration tests, areas with a high level of misorientation were primarily concentrated at the TSV/metal interface and the corners of the TSV-metal line. However, these areas were found to be more prone to developing voids after the tests. It is conjectured that the high misorientation level leads to elevated stress gradients, which are the primary cause of cracking failures in the TSV-metal line. As the current density increases from 5 × 105 A/cm2 to 1 × 106 A/cm2, the electromigration failure phenomena in the TSV become even more severe.

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Section: Introductionmentioning

confidence: 99%

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Gong,

Xie,

Chen

et al. 2023

Crystals

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“…20,21 In this paper, we present the results of a preliminary demonstration of the use of microwave propagation to probe the impact of temperature and current on the device properties during the latent period before the first rise in resistance in the Cu TSV-based interconnects in 3D-ICs as described by Gousseau et al . 22 …”

Section: Introductionmentioning

confidence: 99%

Microwave evaluation of electromigration susceptibility in advanced interconnects

Sunday

Veksler

Cheung

et al. 2017

Journal of Applied Physics

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Traditional metrology has been unable to adequately address the needs of the emerging integrated circuits (ICs) at the nano scale; thus, new metrology and techniques are needed. For example, the reliability challenges in fabrication need to be well understood and controlled to facilitate mass production of through-substrate-via (TSV) enabled three-dimensional integrated circuits (3D-ICs). This requires new approaches to the metrology. In this paper, we use the microwave propagation characteristics to study the reliability issues that precede the physical damage caused by electromigration in the Cu-filled TSVs. The pre-failure microwave insertion losses and group delay are dependent on both the device temperature and the amount of current forced through the devices-under-test. The microwave insertion losses increase with the increase in the test temperature, while the group delay increases with the increase in the forced direct current magnitude. The microwave insertion losses are attributed to the defect mobility at the Cu-TiN interface, and the group delay changes are due to resistive heating in the interconnects, which perturbs the dielectric properties of the cladding dielectrics of the copper fill in the TSVs. https://doi.org/10.1063/1.4992135

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“…23 Both electromigration (EM) and corrosion failure modes manifest in increased interconnect direct current resistance (R DC ); so, techniques are needed to distinguish between them. 20,24 In this paper we characterize heat-induced atmospheric corrosion of metal interconnects, due to the failure of the encapsulating material, and attempt to distinguish it from other pre-electromigration (pre-EM) processes that occur during the latent period before catastrophic EM failure as described by Gousseau et al 25…”

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confidence: 99%

Microwave Monitoring of Atmospheric Corrosion of Interconnects

Amoah

Veksler

Sunday

et al. 2018

ECS J. Solid State Sci. Technol.

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Traditional metrology has been unable to adequately address the reliability needs of emerging integrated circuits at the nano scale; thus, new metrology and techniques are needed. In this paper, we use microwave propagation characteristics (insertion loss and dispersion) to study the atmospheric interconnect corrosion under accelerated stress conditions. The results presented in this work indicate that the corrosion resilience of the test device is limited by the thermal aging of the passivation layer.

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Electromigration-induced failure in operando characterization of 3D interconnects: microstructure influence

Cited by 10 publications

References 18 publications

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Research on Crystal Structure Evolution and Failure Mechanism during TSV-Metal Line Electromigration Process

Microwave evaluation of electromigration susceptibility in advanced interconnects

Microwave Monitoring of Atmospheric Corrosion of Interconnects

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