2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) 2011
DOI: 10.1109/iccad.2011.6105385
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Electromigration modeling and full-chip reliability analysis for BEOL interconnect in TSV-based 3D ICs

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Cited by 29 publications
(12 citation statements)
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“…The widely used filling material for TSVs is copper, which causes TSV-related stresses [11], [15], [16]. TSV-induced stresses can cause reliability issues in several ways.…”
Section: Tsv-induced Stress and Reliability Issuesmentioning
confidence: 99%
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“…The widely used filling material for TSVs is copper, which causes TSV-related stresses [11], [15], [16]. TSV-induced stresses can cause reliability issues in several ways.…”
Section: Tsv-induced Stress and Reliability Issuesmentioning
confidence: 99%
“…Transistors around the TSVs are influenced by stress, which can thereby degrade their performance and impact upon timing and reliability issues. In addition, there is an electromigration reliability impact problem of TSVs on the nearby metal wires [11].…”
Section: Tsv-induced Stress and Reliability Issuesmentioning
confidence: 99%
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