Electromigration Study on Sn(Cu) Solder/Ni(P) Joint Interfaces

Wu, Shaocheng; Hu, Yang; Lu, C. T.; Huang, Teng‐Yi; Chang, Ya‐Hui; Liu, C. Y.

doi:10.1007/s11664-012-2301-5

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…For instance, Nogita et al [10] reported that only a small addition of 0.05 wt % Ni in Sn-0.7wt%Cu is sufficient to stabilize the high-temperature η-Cu 6 Sn 5 phase down to room temperature, thus bypassing the undesirable η → η phase transition at 186 °C and its associated volumetric change during soldering processes. Other benefits also include microstructural refinement [11], good fluidity during soldering [12][13][14], improved mechanical properties of solder joints [15,16], etc. The same strategy has also been applied successfully when using Zn or In as chemical dopants for the stabilization of η-Cu 6 Sn 5 [17,18].…”

Section: Introductionmentioning

confidence: 99%

Atomic locations of minor dopants and their roles in the stabilization ofη−Cu6Sn5

Yang

Tran

Yamamoto

et al. 2020

Phys. Rev. Materials

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Chemical modification using only small amounts of elements such as Zn, In, Sb, or Ni has proven to be an effective means to control the desirable crystal structure of hexagonal η-Cu 6 Sn 5 over a wide thermally operating window, typically found in Pb-free Sn-based soldering or Li-ion battery anode applications. Though appealing, the underlying mechanisms on the role of these dopants remain incomplete and their atomic arrangements within the η-Cu 6 Sn 5 lattices have not yet been experimentally determined. In the current study, we directly reveal the atomic positions of Zn, In, and Sb at the Sn sites of η-Cu 6 Sn 5 via atomic-scale x-ray energy dispersive spectroscopy (XEDS) maps utilizing advanced Cs-corrected scanning transmission electron microscopy. The use of advanced statistical algorithms including Poisson non-local principal component analysis and lattice averaging enables the fine resolution of weak XEDS maps from trace dopant elements. Our first-principles calculations further identify the influence of dopants at these atomic sites on the overall energetics, electronic structures, as well as local bonding environments, leading to the most favorable situations for η-Cu 6 Sn 5 stabilization.

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Section: Introductionmentioning

confidence: 99%

Atomic locations of minor dopants and their roles in the stabilization ofη−Cu6Sn5

Yang

Tran

Yamamoto

et al. 2020

Phys. Rev. Materials

View full text Add to dashboard Cite

show abstract

“…For instance, Nogita et al [10] reported that only a small addition of 0.05 wt % Ni in Sn-0.7wt%Cu is sufficient to stabilize the high-temperature η-Cu 6 Sn 5 phase down to room temperature, thus bypassing the undesirable η → η phase transition at 186°C and its associated volumetric change during soldering processes. Other benefits also include microstructural refinement [11], good fluidity during soldering [12][13][14], improved mechanical * Corresponding author: yangwenhui@nucl.kyushu-u.ac.jp properties of solder joints [15,16], etc. The same strategy has also been applied successfully when using Zn or In as chemical dopants for the stabilization of η-Cu 6 Sn 5 [17,18].…”

Section: Introductionmentioning

confidence: 99%

Atomic Locations of Minor Dopants and Their Roles in the Stabilization of η-Cu 6Sn 5

et al. 2019

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Dependence of shear strength of Sn–3.8Ag–0.7Cu/Co–P solder joints on the P content of Co–P metallization

Liu

et al. 2019

J Mater Sci: Mater Electron

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Electromigration Study on Sn(Cu) Solder/Ni(P) Joint Interfaces

Cited by 9 publications

References 16 publications

Atomic locations of minor dopants and their roles in the stabilization ofη−Cu6Sn5

Atomic locations of minor dopants and their roles in the stabilization ofη−Cu6Sn5

Atomic Locations of Minor Dopants and Their Roles in the Stabilization of <i>η</i>-Cu <sub>6</sub>Sn <sub>5</sub>

Dependence of shear strength of Sn–3.8Ag–0.7Cu/Co–P solder joints on the P content of Co–P metallization

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