Electron backscattering diffraction investigation of focused ion beam surfaces

Matteson, T. L.; Schwarz, Sabine; Houge, E. C.; Kempshall, Brian W.; Giannuzzi, Lucille A.

doi:10.1007/s11664-002-0169-5

Cited by 81 publications

(72 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The simulation result supports the results of prior works (Matteson et al, 2002;Michael & Kotula, 2008) that high-accelerating FIB milling voltage can induce damage deeper than low voltage. Figure 8 shows a band contrast image of the STN99 sample where the surface has been milled with stripes of different milling conditions.…”

Section: Effect Of Fib Voltagesupporting

confidence: 88%

“…The purpose of this study is to investigate a suitable FIB voltage to perform FIB polishing during automated 3D-EBSD data collection of STN-and YSZbased materials. A 5 kV FIB voltage was selected in this study as improvements in EBSP quality after low voltage milling in metals have been reported (Matteson et al, 2002;Michael & Kotula, 2008). Surface preparation using 2 kV FIB polishing was also reported to give a better EBSP quality (Michael & Giannuzzi, 2007); however, due to FIB alignment issues and the slow milling rate, 2 kV polishing was not investigated.…”

Section: Effect Of Fib Voltagementioning

confidence: 99%

See 1 more Smart Citation

Effects of focused ion beam milling on electron backscatter diffraction patterns in strontium titanate and stabilized zirconia

Saowadee

Agersted

Bowen

2012

Journal of Microscopy

View full text Add to dashboard Cite

SummaryThis study investigates the effect of focused ion beam (FIB) current and accelerating voltage on electron backscatter diffraction pattern quality of yttria-stabilized zirconia (YSZ) and Nb-doped strontium titanate (STN) to optimize data quality and acquisition time for 3D-EBSD experiments by FIB serial sectioning. Band contrast and band slope were used to describe the pattern quality. The FIB probe currents investigated ranged from 100 to 5000 pA and the accelerating voltage was either 30 or 5 kV. The results show that 30 kV FIB milling induced a significant reduction of the pattern quality of STN samples compared to a mechanically polished surface but yielded a high pattern quality on YSZ. The difference between STN and YSZ pattern quality is thought to be caused by difference in the degree of ion damage as their backscatter coefficients and ion penetration depths are virtually identical. Reducing the FIB probe current from 5000to 100 pA improved the pattern quality by 20% for STN but only showed a marginal improvement for YSZ. On STN, a conductive coating can help to improve the pattern quality and 5 kV polishing can lead to a 100% improvement of the pattern quality relatively to 30 kV FIB milling. For 3D-EBSD experiments of a material such as STN, it is recommended to combine a high kV FIB milling and low kV polishing for each slice in order to optimize the data quality and acquisition time.

show abstract

Section: Effect Of Fib Voltagesupporting

confidence: 88%

Section: Effect Of Fib Voltagementioning

confidence: 99%

Effects of focused ion beam milling on electron backscatter diffraction patterns in strontium titanate and stabilized zirconia

Saowadee

Agersted

Bowen

2012

Journal of Microscopy

View full text Add to dashboard Cite

show abstract

“…An FEI NOVA200 dual-beam system was used for the preparation of the gold wire samples. Sample preparation through FIB milling results in highquality EBSD band contrast [17,18]. The ion source is liquid Ga metal and ion milling currents ranging from 50 pA to 3 nA and a constant accelerating voltage of 30 kV were used for the gold wire milling.…”

Section: Methodsmentioning

confidence: 99%

Relationship between microstructure homogeneity and bonding stability of ultrafine gold wire

et al. 2011

View full text Add to dashboard Cite

Inhomogeneous microtexture evolution during the cold drawing process usually results in lean, sway, or sweep failure. The <111> longitudinal fiber texture has higher stiffness than the <100> texture and its proportion and distribution in the cross-section are critical for the bonding stability of fine gold wire. We investigated the inhomogeneous microtexture evolution of gold wire that was cold drawn through an asymmetric diamond die. In this study, the distributions of the <111> and <100> textures in a 20 μm diameter fine gold wire are the variables and their effects on the bonding stability of the wire were estimated by electron backscattered diffraction (EBSD) and finite element method (FEM) simulations. The use of a focused ion beam apparatus enabled a high quality of band contrast of the EBSD to be achieved in the exact half cross-sectional area of the fine gold wire. The detailed three-dimensional FEM results show that the asymmetric distribution of the textures plays a crucial role in increasing the spatial displacement of the gold bonding wire.

show abstract

“…Irradiating a material surface in grazing incidence allows the preparation of smooth surfaces that show little radiation damage. [10][11][12] This technique has been used extensively for the preparation of transmission electron microscopy (TEM) samples, as well as for the preparation of flat surfaces for metallographic investigations. Through the sputtering of subsequent parallel surfaces, serial sections can be created that may be separated by precisely defined distances of some 10 nm up to several microns.…”

Section: B Tomography By Serial Sectioningmentioning

confidence: 99%

Three-Dimensional Orientation Microscopy in a Focused Ion Beam–Scanning Electron Microscope: A New Dimension of Microstructure Characterization

Zaefferer

Wright

Raabe

2008

Metall Mater Trans A

215

113

View full text Add to dashboard Cite

In the present work, we report our recent progress in the development, optimization, and application of a technique for the three-dimensional (3-D) high-resolution characterization of crystalline microstructures. The technique is based on automated serial sectioning using a focused ion beam (FIB) and characterization of the sections by orientation microscopy based on electron backscatter diffraction (EBSD) in a combined FIB-scanning electron microscope (SEM). On our system, consisting of a Zeiss-Crossbeam FIB-SEM and an EDAX-TSL EBSD system, the technique currently reaches a spatial resolution of 100 · 100 · 100 nm 3 as a standard, but a resolution of 50 · 50 · 50 nm 3 seems to be a realistic optimum. The maximum observable volume is on the order of 50 · 50 · 50 lm 3 . The technique extends all the powerful features of two-dimensional (2-D) EBSD-based orientation microscopy into the third dimension of space. This allows new parameters of the microstructure to be obtained-for example, the full crystallographic characterization of all kinds of interfaces, including the morphology and the crystallographic indices of the interface planes. The technique is illustrated by four examples, including the characterization of pearlite colonies in a carbon steel, of twins in pseudonanocrystalline NiCo thin films, the description of deformation patterns formed under nanoindents in copper single crystals, and the characterization of fatigue cracks in an aluminum alloy. In view of these examples, we discuss the possibilities and limits of the technique. Furthermore, we give an extensive overview of parallel developments of 3-D orientation microscopy (with a focus on the EBSD-based techniques) in other groups.

show abstract

Electron backscattering diffraction investigation of focused ion beam surfaces

Cited by 81 publications

References 13 publications

Effects of focused ion beam milling on electron backscatter diffraction patterns in strontium titanate and stabilized zirconia

Effects of focused ion beam milling on electron backscatter diffraction patterns in strontium titanate and stabilized zirconia

Relationship between microstructure homogeneity and bonding stability of ultrafine gold wire

Three-Dimensional Orientation Microscopy in a Focused Ion Beam–Scanning Electron Microscope: A New Dimension of Microstructure Characterization

Contact Info

Product

Resources

About