Mg-Y alloys show significantly enhanced room temperature ductility compared to pure Mg and other classical Mg wrought alloys. The presented study focuses on understanding the mechanisms for this ductility improvement by microstructure analysis, texture analysis and slip trace analysis based on electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). As expected pure Mg mainly deforms by basal slip and tensile twinning. In contrast, MgY shows a high activity of compression twinning, secondary twinning and pyramidal slip. These additional deformation modes cause a homogeneous deformation with weaker basal texture and more balanced work hardening and enhanced ductility. Additionally, in Mg-Y shear bands are much more frequent and carry less strain than those in pure Mg. As a consequence failure in shear bands occurs at significantly higher strain. The experimental results are discussed focusing on the mechanisms effecting the observed high activation of pyramidal deformation modes in Mg-Y. 1 Introduction Magnesium is a preferable material for lightweight automotive applications and shows a great potential for material substitution due to its high density-strength ratio. Wide industrial application of magnesium is hindered because of its poor room temperature formability, which is caused by pronounced basal slip and a strong basal type texture.

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Metal-halide perovskite semiconductors are of tremendous interest for a variety of applications. Only recently, solar cells based on a representative of this family have been certified with an efficiency in excess of 24%.[1] Aside from their remarkable success in photovoltaics, metal-halide perovskites are also highly promising as light emitters, e.g., in light-emitting diodes (LEDs) or lasers. [2][3][4] LEDs based on the fruit-fly of these compounds, i.e., methylammonium lead iodide (CH 3 NH 3 PbI 3 or MAPbI 3 ), and other related perovskites have been demonstrated with continuously increasing efficiency. [5][6][7] For lasers, there is the vision that perovskites may overcome/avoid the typical limitations and loss mechanisms present in organic gain media, such as triplet-singlet annihilation or absorption due to triplet excitons and Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX 3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX 3 nanoparticles (NPs).Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX 3 perovskites can only be achieved with NPs.