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Metal-halide perovskite semiconductors are of tremendous interest for a variety of applications. Only recently, solar cells based on a representative of this family have been certified with an efficiency in excess of 24%.[1] Aside from their remarkable success in photovoltaics, metal-halide perovskites are also highly promising as light emitters, e.g., in light-emitting diodes (LEDs) or lasers. [2][3][4] LEDs based on the fruit-fly of these compounds, i.e., methylammonium lead iodide (CH 3 NH 3 PbI 3 or MAPbI 3 ), and other related perovskites have been demonstrated with continuously increasing efficiency. [5][6][7] For lasers, there is the vision that perovskites may overcome/avoid the typical limitations and loss mechanisms present in organic gain media, such as triplet-singlet annihilation or absorption due to triplet excitons and Cesium lead halide perovskites are of interest for light-emitting diodes and lasers. So far, thin-films of CsPbX 3 have typically afforded very low photoluminescence quantum yields (PL-QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX 3 nanoparticles (NPs).Here, thin films of cesium lead bromide, which show a high PL-QY of 68% and low-threshold ASE at RT, are presented. As-deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin-film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX 3 perovskites can only be achieved with NPs.

Thermal management in devices like solar cells, light-emitting diodes, and lasers based on hybrid halide perovskite thin films is expected to be of paramount importance for optimal performance and reliability. As of yet, experimental data of thermal properties of non-iodine-based hybrid halide perovskites is very scarce. Here the thermal conductivity of methylammonium lead halide perovskite (CH3NH3PbX3 X= I, Br, and Cl) single crystals and thin films is analyzed by scanning near-field thermal microscopy. The thermal conductivity of CH3NH3PbX3 single crystals with X= I, Br, and Cl is found to be 0.34 ± 0.12, 0.44 ± 0.08, and 0.50 ± 0.05 W/(mK) at room temperature, respectively. Strikingly, similar thermal conductivities are determined for the corresponding thin-film samples. The thermal conductivity of MAPbI3 in the cubic phase (T > 55 °C) increases to (1.1 ± 0.1) W/(mK). In addition, the temperature dependence of the thermal conductivities and of thermal expansion coefficients of MAPbI3 around the phase transition from the tetragonal to cubic phase is presented.