2011
DOI: 10.1002/pip.1098
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Electron‐beam crystallized large grained silicon solar cell on glass substrate

Abstract: Thin film hetero-emitter solar cells with large-grained poly-silicon absorbers of around 10 mm thickness have been prepared on glass. The basis of the cell concept is electron-beam-crystallization of an amorphous or nanocrystalline silicon layer deposited onto a SiC:B layer. The SiC:B layer covers a commercially well available glass substrate, serving as diffusion barrier, contact layer and dopand source. For silicon absorber deposition a low pressure chemical vapour deposition was used. The successively appli… Show more

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Cited by 94 publications
(63 citation statements)
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“…In the next step the Si is liquid phase crystallized using a line focussed e-beam at a constant scanning speed of 6 mm/s and an energy of around 1 J/mm 2 resulting in lateral crystal growth. 14 No dependence of the crystallization parameters on the type of substrate has been observed. The dopant concentration of the Si absorber layer was 2 x 10 17 cm -3 .…”
Section: B Preparation Of the Absorber Layermentioning
confidence: 95%
“…In the next step the Si is liquid phase crystallized using a line focussed e-beam at a constant scanning speed of 6 mm/s and an energy of around 1 J/mm 2 resulting in lateral crystal growth. 14 No dependence of the crystallization parameters on the type of substrate has been observed. The dopant concentration of the Si absorber layer was 2 x 10 17 cm -3 .…”
Section: B Preparation Of the Absorber Layermentioning
confidence: 95%
“…2 During LPC the silicon absorber layer is heated above its melting temperature using an electron or a laser beam which is scanned over the sample. Thus, the silicon film is recrystallized from the melt solidifying into grains that are up to a few centimeters long.…”
Section: Introductionmentioning
confidence: 99%
“…One example is beaminduced crystallization and amorphization. This area was actively explored in the 1980s and 1990s, and e-beam crystallization of a number of important semiconductors such as Si [49][50][51][52] and GaAs [52][53][54] has been reported. Similarly, the beam can result in selective removal of material, and when integrated with beam-induced reactions, it can enable fabrication of nanoscale structures, as summarized in recent reviews by Krasheninnikov,55 Gonzales-Martinez, 56 and Jesse.…”
Section: The Third Paradigm: Electron Beamsmentioning
confidence: 99%