a Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 µm thin liquid phase crystallized silicon thinfilm solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

Recently, liquid phase crystallization of thin silicon films has emerged as a candidate for thin-film photovoltaics. On 10 μm thin absorbers, wafer-equivalent morphologies and open-circuit voltages were reached, leading to 13.2% record efficiency. However, short-circuit current densities are still limited, mainly due to optical losses at the glass-silicon interface. While nano-structures at this interface have been shown to efficiently reduce reflection, up to now these textures caused a deterioration of electronic silicon material quality. Therefore, optical gains were mitigated due to recombination losses. Here, the SMooth Anti-Reflective Three-dimensional (SMART) texture is introduced to overcome this trade-off. By smoothing nanoimprinted SiOx nano-pillar arrays with spin-coated TiOx layers, light in-coupling into laser-crystallized silicon solar cells is significantly improved as successfully demonstrated in three-dimensional simulations and in experiment. At the same time, electronic silicon material quality is equivalent to that of planar references, allowing to reach V oc values above 630 mV. Furthermore, the short-circuit current density could be increased from 21.0 mA cm−2 for planar reference cells to 24.5 mA cm−2 on SMART textures, a relative increase of 18%. External quantum efficiency measurements yield an increase for wavelengths up to 700 nm compared to a state-of-the-art solar cell with 11.9% efficiency, corresponding to a jsc, EQE gain of 2.8 mA cm−2.

All-inorganic CsPbBr3 perovskite colloidal quantum dots have recently emerged as promising material for a variety of optoelectronic applications, among others for multi-photon-pumped lasing. Nevertheless, high irradiance levels are generally required for such multi-photon processes.One strategy to enhance the multi-photon absorption is taking advantage of high local light intensities using photonic nanostructures. Here, we investigate two-photon-excited photoluminescence of CsPbBr3 perovskite quantum dots on a silicon photonic crystal slab. By systematic excitation of optical resonances using a pulsed near-infrared laser beam, we observe an enhancement of two-photon-pumped photoluminescence by more than one order of magnitude when comparing to using a bulk silicon film. Experimental and numerical analyses allow relating these findings to near-field enhancement effects on the nanostructured silicon surface. The results reveal a promising approach for significant decreasing the required irradiance levels for multiphoton processes being of advantage in applications like low-threshold lasing, biomedical imaging, lighting and solar energy.

The effect of field annealing for exchanged biased multilayer films is studied with respect to the resultant structural and magnetic film properties. The presented multilayer stacks comprise repeating sequences of Ta/Cu/{1 1 1} textured antiferromagnetic Mn70Ir30/amorphous ferromagnetic Fe70.2Co7.8Si12B10. Within the ferromagnetic layers crystalline filaments are observed. An additional Ta layer between the antiferromagnet and ferromagnet is used in order to investigate and separate the influence of the common Mn70Ir30/Fe70.2Co7.8Si12B10 interface on the occurring filaments and structural changes. In situ and ex situ transmission electron microscopy is used for a comprehensive structure characterization of multilayer stacks for selected temperature stages. Up to 250 °C, the multilayers are structurally unaltered and preserve the as-deposited condition. A deliberate increase to 350 °C exhibits different crystallization processes for the films, depending on the presence of crystal nuclei within the amorphous ferromagnetic layer. The influence of volume-to-surface ratio of the multilayer stacks to the crystallization process is emphasized by the comparison of in situ and ex situ investigations as the respective specimen thickness is changed. Complementary magnetic studies reveal a defined exchange bias obtained at the first annealing step and a decrease of total anisotropy field with partial crystallization after the subsequent annealing at 350 °C.