Electron-beam fabrication of 80-Å metal structures

Broers, A. N.; Molzen, W. W.; Cuomo, J. J.; Wittels, Norman

doi:10.1063/1.89155

Cited by 313 publications

(126 citation statements)

References 9 publications

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“…3 EBID in its simplest form, directed carbon contamination growth, was first described in 1976, 4 but the exact mechanism of the precursor dissociation process is still not yet well understood. At the heart of the question is the total adsorbed precursor electron-impact deposition cross section, which is not known for these compounds in these conditions, 5 although increasingly educated guesses are being made and used.…”

Section: Introductionmentioning

confidence: 99%

Electron-beam-induced deposition of platinum at low landing energies

Botman

Winter

Mulders³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Electron-beam-induced deposition of platinum from methylcyclopentadienyl-platinum-trimethyl was performed with a focused electron beam at low landing energies, down to 10 eV. The deposition growth rate is maximal at 140 eV, with the process being over ten times more efficient than at 20 kV. No significant dependence of composition with landing energy was found in the deposits performed at energies between 40 and 1000 eV. This study provides further evidence for the dissociation process being primarily driven by the sub-20-eV secondary electrons.

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Section: Introductionmentioning

confidence: 99%

Electron-beam-induced deposition of platinum at low landing energies

Botman

Winter

Mulders³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Broers et al 1 were the first to use contamination grown patterns as an etching mask to define 8-nm-wide metal lines. Only in the last decade has EBID gained more importance as a tool for additive lithography, 2 practiced mainly in scanning electron microscopes ͑SEM͒.…”

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confidence: 99%

Direct fabrication of nanowires in an electron microscope

Silvis-Cividjian

Hagen

Kruit

et al. 2003

Applied Physics Letters

109

115

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Electron-beam-induced deposition ͑EBID͒ is a potentially fast and resistless deposition technique which might overcome the fundamental resolution limits of conventional electron-beam lithography. We advance the understanding of the EBID process by simulating the structure growth. The merit of our model is that it explains the shapes of structures grown by EBID quantitatively. It also predicts the possibility to directly fabricate structures with lateral sizes smaller than 10 nm and points out the ideal conditions to achieve this goal. We verify these predictions by fabricating sub-10-nm lines and dots in a state-of-the-art scanning transmission electron microscope. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1575506͔ Energetic beams of photons, ions, and electrons are currently in use for fabrication of submicron devices for such diverse applications as microelectronics, nanophysics, and molecular biology. Among these, the focused electron beam fabricates the smallest features. The conventional electronbeam-induced lithography, based on polymethylmethacrylate resist has reached its fundamental resolution limits, situated around 10 nm, as dictated by the interaction range of electrons with the resist, by the molecular size, and by the resist development mechanism. To fabricate even smaller structures, we investigate a resistless technique, called electronbeam-induced deposition ͑EBID͒, which might overcome the present resolution limitation problem.Originally EBID was well known as contamination growth in electron microscopy. Broers et al.1 were the first to use contamination grown patterns as an etching mask to define 8-nm-wide metal lines. Only in the last decade has EBID gained more importance as a tool for additive lithography, 2 practiced mainly in scanning electron microscopes ͑SEM͒. The principle of EBID is illustrated in Fig. 1 and can be described briefly as follows. In a high vacuum chamber, an electron beam is focused on a substrate surface on which precursor gas molecules, containing the element to be deposited ͑organometallic compound or hydrocarbon͒, are adsorbed. As a result of complex beam-induced surface reactions, the precursor molecules adsorbed in and near to the irradiated area, dissociate into nonvolatile ͑the deposit͒ and volatile fragments ͑to be pumped away͒. The advantage of EBID over conventional lithography methods is that two-, and even three-dimensional ͑3D͒, 2-4 structures are patterned and deposited simultaneously, making it a fast, one-step technique.The theoretical understanding of EBID is rather poor. Until now, there has not been a proper explanation for the fact that the smallest structures fabricated with EBID are typically 15-20-nm wide, even though electron optical instruments, like SEMs and scanning transmission electron microscopes ͑STEMs͒, with much smaller probe sizes were used. [5][6][7][8] We improve the understanding by modeling the material growth under electron-beam irradiation. The merit of our model is not only that it explains the shapes of structures g...

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“…Recently it was shown how an EBID formed metal pattern can be transferred to the silicon substrate by ion milling [17] or dry etching [18], producing high aspect ratio Si nanostructures. It should be noted, though, that the ion beam etching [19] acting through physical sputtering introduces a lot of point damage or even amorphization to the substrate material. In this respect chemical sputtering, used in e.g.…”

Section: Introductionmentioning

confidence: 99%

Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography

Sychugov

Nakayama²,

Mitsuishi³

2010

Nanotechnology

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Abstract.A novel top-down approach for the controllable fabrication of semiconductor nanostructures exhibiting quantum effects is described. By decomposing metal-rich precursor gas molecules with an electron beam a sub-10 nm metal pattern can be formed and subsequently transferred to a semiconductor substrate. In such a way monocrystalline silicon nanodots and nanowires are produced as revealed by the transmission electron microscopy. It is also shown how through controlled thermal or chemical oxidation the nanostructure surface can be passivated. By providing direct access to the sub-10 nm size range this method possesses promising potential for the application in quantum dot and nanoelectronics fields.

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Electron-beam fabrication of 80-Å metal structures

Abstract: Articles you may be interested inFabrication of curved structures with electron-beam and surface structure characterization

Cited by 313 publications

References 9 publications

Electron-beam-induced deposition of platinum at low landing energies

Electron-beam-induced deposition of platinum at low landing energies

Direct fabrication of nanowires in an electron microscope

Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography

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