Electron-beam generated copper plasma: formation and cross-field propagation

Majumder, A.; Sahu, Gayatri; Thakur, K. B.; Mago, V. K.

doi:10.1088/0022-3727/43/7/075204

Cited by 8 publications

(3 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…But it is exactly this region of high vapor density that the e-beam has to cross on its way to the crucible (see figure 1). Therefore, electron-impact ionization between primary electrons and the vapor leads to the partial ionization of the vapor [13][14][15][16][17][18][19]. Several factors such as the alignment of the e-beam, chosen deposition parameters, and material constants of the evaporation material determine the total amount of this ionization, i.e.…”

Section: Partially Ionized Vapormentioning

confidence: 99%

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Volmer

Inga

Bißwanger

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in more detail: First, we discuss an unintentional shadow evaporation beneath the undercut of a resist layer caused by the one part of the metal vapor which got ionized by electron-impact ionization. These ions first lead to an unintentional build-up of charges on the sample, which in turn results in an electrostatic deflection of subsequently incoming ionized metal atoms toward the undercut of the resist. Second, we show how low-energy secondary electrons during the metallization process can cause cross-linking, blisters, and bubbles in the respective resist layer used for defining micro- and nanostructures in an e-beam lithography process. After the metal deposition, the cross-linked resist may lead to significant problems in the lift-off process and causes leftover residues on the device. We provide a troubleshooting guide on how to minimize these effects, which e.g. includes the correct alignment of the e-beam, the avoidance of contaminations in the crucible and, most importantly, the installation of deflector electrodes within the evaporation chamber.

show abstract

Section: Partially Ionized Vapormentioning

confidence: 99%

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Volmer

Inga

Bißwanger

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Therefore, electron-impact ionization between primary electrons and the vapor leads to the partial ionization of the vapor. [13][14][15][16][17][18][19] Several factors such as the alignment of the ebeam, chosen deposition parameters, and material constants of the evaporation material determine the total amount of this ionization, i.e. the ratio between the neutral and ionized vapor densities.…”

Section: Types Of Particles and Radiation Emitted From An E-beam Evap...mentioning

confidence: 99%

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Volmer,

Seidler,

Bisswanger

et al. 2020

Preprint

View full text Add to dashboard Cite

We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro-and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in more detail: First, we discuss an unintentional shadow evaporation beneath the undercut of a resist layer caused by the one part of the metal vapor which got ionized by electron-impact ionization. These ions first lead to an unintentional build-up of charges on the sample, which in turn results in an electrostatic deflection of subsequently incoming ionized metal atoms towards the undercut of the resist. Second, we show how low-energy secondary electrons during the metallization process can cause cross-linking, blisters, and bubbles in the respective resist layer used for defining micro-and nanostructures in an e-beam lithography process. After the metal deposition, the crosslinked resist may lead to significant problems in the lift-off process and causes leftover residues on the device. We provide a troubleshooting guide on how to minimize these effects, which e.g. includes the correct alignment of the e-beam, the avoidance of contaminations in the crucible and, most importantly, the installation of deflector electrodes within the evaporation chamber.

show abstract

“…It mainly consisted of (i) an evaporator (vacuum chamber) (ii) a linear strip type electron gun (e-gun) and (iii) diagnostic equipments for vapor and plasma studies. The details of the setup have been described elsewhere [3].…”

Section: Introductionmentioning

confidence: 99%

Measurement of plasma parameters in zirconium plasma using langmuir probe

Jana¹,

Majumder²,

Baruah³

et al. 2012

AIP Conference Proceedings

View full text Add to dashboard Cite

Zirconium (Zr) plasma is produced by electron-impact ionization during Zr vapor evaporation in an electron beam evaporator. The plasma is embedded in the vapor. It expands along with the vapor in a transverse magnetic field. Parameters like ion density, electron temperature, space potential, floating potential of the plasma were measured by a disc type Langmuir probe. Since Zr metal has high melting point (~ 2128 K), the evaporator is filled with condensable vapor and remains at high temperature (~ 700 K). The probe was designed and fabricated in a manner that the insulator was protected from the direct deposition of Zr vapor. The measurement shows that the e-beam generated plasma is weakly ionized (degree of ionization ~ 0.1 %) and it has low electron temperature (~ 0.1 eV). It is also observed that the plasma ions have a flow velocity in vertical direction similar to the neutral atoms.

show abstract

Electron-beam generated copper plasma: formation and cross-field propagation

Cited by 8 publications

References 31 publications

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Measurement of plasma parameters in zirconium plasma using langmuir probe

Contact Info

Product

Resources

About