Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

Trunov, M. L.; Cserháti, Csaba; Lytvyn, P. M.; Kaganovskii, Yuri; Kökényesi, S.

doi:10.1088/0022-3727/46/24/245303

Cited by 21 publications

(19 citation statements)

References 41 publications

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“…Our theoretical analysis is based on alternative driving force (in line with predictions and previous results [22,23]), namely, steady state lateral electric field, which appears in ACFs under non-homogeneous illumination by band gap light (Dember field [24])…”

Section: Discussionsupporting

confidence: 57%

“…The diffusion coefficients are accelerated under irradiation due to creation of radiation defects, whose concentration, n ex (x), is proportional to n(x) or p(x). We assumed that As it follows from the atomic theory of diffusion [28], the PI diffusion coefficients can be given as [22] …”

Section: Discussionmentioning

confidence: 99%

“…The kinetics of SRG amplitude growth was calculated similarly to that made previously for electron beam induced mass transport [22]. We assumed that mobile species have an effective charge, e, positive or negative, since electrons and holes are localized near radiation defects.…”

Section: Discussionmentioning

confidence: 99%

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Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

et al. 2015

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We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As 20 Se 80 can be optically recorded at low temperature, such as 77 K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric field induced by light interference. The kinetics of PI SRG growth depends on temperature due to temperature dependence of PI diffusion coefficients and concentration of radiation defects. By comparison of low temperature kinetics with that at 300 K we estimated diffusion activation energy, which turned out 0.09 eV. We present a model that explains low diffusion activation energy.

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Section: Discussionsupporting

confidence: 57%

Section: Discussionmentioning

confidence: 99%

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Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

et al. 2015

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“…On the microscopic level holographic grating creation could be connected with electron-hole pair excitation, defect creation, bond breaking and rearrangement in illuminated strips. These processes are mainly related to and induced by the Se atoms, the bonds of which are sensitive to appropriate light illumination and appear as lateral mass transport in the illuminated strips, on the macroscopic level, controlled by volume diffusion as it was shown for As-Se system [36][37][38]. The mass transport could be connected with the gradient force of the electric field induced by light interference [39].…”

Section: Raman Spectroscopic Investigationsmentioning

confidence: 99%

“…However, all of them interpreted the formation of surface patterns with photo-induced volume changes of the layer due to the localized structural rearrangement and ordering of Se-Se chains in selenide based films [7,[36][37][38].…”

Section: Raman Spectroscopic Investigationsmentioning

confidence: 99%

Surface patterning in Ge Se amorphous layers

Csarnovics

Vereš

Němec

et al. 2017

Journal of Non-Crystalline Solids

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Laser-induced surface relief patterns were performed in Ge-Se amorphous layers.Compositional and fabrication method dependences on recording were established.Modulation depth of the created structures increases with increasing Se content.Advantage of pulsed laser deposition in comparison to thermal evaporation is shown.Thermal annealing has essential influence on the pattering parameters. AbstractCompositional and fabrication method dependences of laser-induced geometrical surface relief formation in Ge-Se amorphous layers were investigated with the aim to determine the possible role of initial conditions in the mechanism and efficiency of optical recording. The results show that pulsed laser deposition has some advantages in composition preservation and surface relief formation in comparison with thermal evaporation for producing layers with high sensitivity and efficiency of surface relief grating formation, especially in layers with Ge 24 Se 76 composition. It was shown that modulation depth of the created surface structures increases with increasing Se content in Ge-Se amorphous chalcogenide layers. Thermal annealing has essential influence on the recording parameters, enabling additional insight into the possible mechanisms of light induced surface patterning in this type of light-sensitive amorphous chalcogenides. Raman spectroscopy was used to identify local structure of produced surface patterns.

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Laser Recording in Chalcogenide Glass Films: Driving Forces and Kinetics of the Mass Transfer

Kaganovskii

Genish

Rosenbluh

2020

Physica Status Solidi (a)

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Herein, precision recording of indented dots and lines in As10Se90 and As2S3 chalcogenide glass films by a focused laser beam is demonstrated and the kinetics and mechanisms of mass transfer under illumination are studied. Due to inhomogeneous intensity distribution and local heating of the film at the focal point, the beam at rest produces an indentation whose depth increases with time and laser power. Illumination by a moving beam leads to formation of groves whose morphology depends on the beam speed and power. At low light intensities, formation of the indentations occurs in the solid phase, due to photoinduced radial diffusion of the film constituents coupled with electrons and holes created by light. The two main driving forces present are: 1) a lateral steady‐state electric field formed due to different mobilities of electrons and holes and 2) driving force of thermodiffusion (Soret effect). At high light intensities, formation of the indentations and grooves occurs with the participation of a liquid phase, with an additional mechanism of viscous flow caused by a gradient in surface tension. However, the contribution of viscous flow mechanism is small compared with diffusion mass transfer. Calculated profiles of the indentations and grooves are in a good agreement with experimental data.

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Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

Cited by 21 publications

References 41 publications

Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

Surface patterning in Ge Se amorphous layers

Laser Recording in Chalcogenide Glass Films: Driving Forces and Kinetics of the Mass Transfer

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