Electron-beam-induced potentials in semiconductors: calculation and measurement with an SEM/SPM hybrid system

Thomas, Ch.; Joachimsthaler, I.; Heiderhoff, R.; Balk, L.J.

doi:10.1088/0022-3727/37/20/003

Cited by 21 publications

(4 citation statements)

References 16 publications

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“…Renoud et al (2002) approximated the charge distribution implanted within the sample with a semi-ellipsoidal negative shell where the trapped electrons were assumed to be located. Theoretical models were also developed to describe the charging processes in semiconductors (Fitting & Touzin, 2011) and the surface potential distribution after electron beam irradiation (Thomas et al, 2004).…”

Section: Introductionmentioning

confidence: 99%

Surface Charge and Carbon Contamination on an Electron-Beam-Irradiated Hydroxyapatite Thin Film Investigated by Photoluminescence and Phase Imaging in Atomic Force Microscopy

et al. 2014

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The surface properties of hydroxyapatite, including electric charge, can influence the biological response, tissue compatibility, and adhesion of biological cells and biomolecules. Results reported here help in understanding this influence by creating charged domains on hydroxyapatite thin films deposited on silicon using electron beam irradiation and investigating their shape, properties, and carbon contamination for different doses of incident injected charge by two methods. Photoluminescence laser scanning microscopy was used to image electrostatic charge trapped at pre-existing and irradiation-induced defects within these domains, while phase imaging in atomic force microscopy was used to image the carbon contamination. Scanning Auger electron spectroscopy and Kelvin probe force microscopy were used as a reference for the atomic force microscopy phase contrast and photoluminescence laser scanning microscopy measurements. Our experiment shows that by combining the two imaging techniques the effects of trapped charge and carbon contamination can be separated. Such separation yields new possibilities for advancing the current understanding of how surface charge influences mediation of cellular and protein interactions in biomaterials.

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Section: Introductionmentioning

confidence: 99%

Surface Charge and Carbon Contamination on an Electron-Beam-Irradiated Hydroxyapatite Thin Film Investigated by Photoluminescence and Phase Imaging in Atomic Force Microscopy

et al. 2014

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“…Its presence has been theoretically analyzed and discussed. 30 This field contributes to an active motion within the solid and has been used for explanation of the processes of volume change in the chalcogenide glasses under the influence of e-beam. 31 Under the influence of the field, some areas in the network experience electrostatic pressure, which contributes to the formation of voids and volume increase.…”

Section: Discussionmentioning

confidence: 99%

Electron beam effects in Ge–Se thin films and resistance change memory devices

Wolf

Barnaby

Ailavajhala

et al. 2016

Emerging Materials Research

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Chalcogenide glasses are the advanced materials of choice for the emerging nanoionic memory devicesconductive bridge random access memory (CBRAM). To understand the nature of the effects occurring in these devices under influence of electron-beam radiation, the interaction of blanked chalcogenide films and nanostructured films containing chalcogenide glass and silver (Ag) source are studied. Raman spectroscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction are used for establishing the structural and compositional effects occurring under radiation. They have strong compositional dependence with the stoichiometric compositions being most stable showing less structural changes after radiation. These effects are associated with the availability of lone-pair electrons, their participation in the bonding configurations and the coupling of electron states in the bandgap. They are further enhanced in the bilayers by silver diffusion in the chalcogenide matrix, as a result of interaction with electrons. These effects are used to interpret the electrical performance of CBRAM devices after radiation. The devices are characterized by their resistance states, threshold voltage and endurance. Those based on selenium-rich and stoichiometric composition undergo continuous parameters changes with increase in the radiation dose while in the devices based on germanium-rich composition a counter play of the structural changes and expulsion of silver occur.

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“…To illustrate the contribution of Seebeck effect in formation of steady-state lateral electric field, we have to consider radial distribution of carriers, n(ρ), generated by the light and by the temperature distribution, T(ρ), given by Equation (1). We calculated n(ρ) for cylindrical symmetry following Thomas et al [30] The generation rate per unit volume can be calculated as…”

Section: Low Powers: Electric Field Caused By Intensity and Temperatumentioning

confidence: 99%

“…To illustrate the contribution of Seebeck effect in formation of steady‐state lateral electric field, we have to consider radial distribution of carriers, n ( ρ ), generated by the light and by the temperature distribution, T ( ρ ), given by Equation (). We calculated n ( ρ ) for cylindrical symmetry following Thomas et al [ 30 ] The generation rate per unit volume can be calculated as

g (ρ) = χ \cdot I_{normalm} \exp (- ρ^{2} / w^{2}) / E_{normalg} H

where

I_{m} \exp (- ρ^{2} / w^{2})

is the Gaussian intensity distribution in the radial direction,

I_{normalm} = P_{normala} / π w^{2}

P_{a} = P (1 - R) (1 - e^{- α H})

is the laser power absorbed by the film ( P is the laser power, R is reflectivity, and α is the absorption coefficient, E g is the bandgap of the film material, and χ considers the efficiency of the photo carrier generation, and

π w^{2} H

is the generation volume.…”

Section: Driving Forces and Kinetics Of The Mass Transportmentioning

confidence: 99%

Laser Recording in Chalcogenide Glass Films: Driving Forces and Kinetics of the Mass Transfer

Kaganovskii

Genish

Rosenbluh

2020

Physica Status Solidi (a)

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Herein, precision recording of indented dots and lines in As10Se90 and As2S3 chalcogenide glass films by a focused laser beam is demonstrated and the kinetics and mechanisms of mass transfer under illumination are studied. Due to inhomogeneous intensity distribution and local heating of the film at the focal point, the beam at rest produces an indentation whose depth increases with time and laser power. Illumination by a moving beam leads to formation of groves whose morphology depends on the beam speed and power. At low light intensities, formation of the indentations occurs in the solid phase, due to photoinduced radial diffusion of the film constituents coupled with electrons and holes created by light. The two main driving forces present are: 1) a lateral steady‐state electric field formed due to different mobilities of electrons and holes and 2) driving force of thermodiffusion (Soret effect). At high light intensities, formation of the indentations and grooves occurs with the participation of a liquid phase, with an additional mechanism of viscous flow caused by a gradient in surface tension. However, the contribution of viscous flow mechanism is small compared with diffusion mass transfer. Calculated profiles of the indentations and grooves are in a good agreement with experimental data.

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Electron-beam-induced potentials in semiconductors: calculation and measurement with an SEM/SPM hybrid system

Cited by 21 publications

References 16 publications

Surface Charge and Carbon Contamination on an Electron-Beam-Irradiated Hydroxyapatite Thin Film Investigated by Photoluminescence and Phase Imaging in Atomic Force Microscopy

Surface Charge and Carbon Contamination on an Electron-Beam-Irradiated Hydroxyapatite Thin Film Investigated by Photoluminescence and Phase Imaging in Atomic Force Microscopy

Electron beam effects in Ge–Se thin films and resistance change memory devices

Laser Recording in Chalcogenide Glass Films: Driving Forces and Kinetics of the Mass Transfer

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