2012
DOI: 10.1016/j.jnoncrysol.2012.02.013
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Electron beam induced surface modification of amorphous Sb2Se3 thin film

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Cited by 8 publications
(4 citation statements)
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“…The pressure of the evaporated material on the molten displaces the liquid material to edge of the dimple [22,24]. The shape of the dimples is a spherical cap that is commonly called U-type [29][30][31][32]. This shape is due to only the Gaussian peak of the laser beam having sufficient energy to ablate the material [32].…”
Section: Topographymentioning
confidence: 99%
See 1 more Smart Citation
“…The pressure of the evaporated material on the molten displaces the liquid material to edge of the dimple [22,24]. The shape of the dimples is a spherical cap that is commonly called U-type [29][30][31][32]. This shape is due to only the Gaussian peak of the laser beam having sufficient energy to ablate the material [32].…”
Section: Topographymentioning
confidence: 99%
“…The study showed that the geometry of the dimples on NdFeB alloy had acceptable quality. The dimple shape was U-type [29][30][31][32]. Moreover, the factors of the laser beam-material interaction (energy depth penetration, pulse energy and energy fluence threshold) have been measured in this study.…”
Section: Introductonmentioning
confidence: 99%
“…The dimple form has a spherical cap. These dimples are therefore classified as U-type [66][67][68][69]. This geometry arises as the Gaussian peak of the laser beam possesses sufficient energy to ablate the metallic material [31,69,70].…”
Section: Topographymentioning
confidence: 99%
“…Applications in phase-change memories [1,2] and in detectors for medical imaging [3] and electron beam (EB) lithography seem most remarkable. Today the study of interaction between ChG and EB is an actual task; a number papers have been published on EB induced reliefs in stoichiometric [4] and non-stoichiometric [5,6] As-S thin films, experimental results on electron beam induced reliefs in Ge-Se [7], Sb-S [8] and Sb-Se [9] thin films, investigation of recording on Se/As 2 S 3 and Sb/As 2 S 3 nanolayered structures [10].…”
Section: Introductionmentioning
confidence: 99%