The interaction between electron beam and amorphous chalcogenide films

Shiman, Oksana; Gerbreders, V.; Gulbis, Arnis

doi:10.1016/j.jnoncrysol.2012.05.042

Cited by 9 publications

(4 citation statements)

References 32 publications

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“…where ( ) = 0.1382 − 0.9211 √ , ( ) = 0.1904 − − 0.2235 ln + 0.1292(ln ) 2 − 0.01491(ln ) 3 , where is the average charge of an atomic nucleus. As a result, the following values were obtained:…”

Section: Discussionmentioning

confidence: 99%

“…The intense generation of charges within a chalcogenide film occurs also under the electron irradiation. Investigations of the interaction of electron beams with chalcogenide films of the binary compositions As-Se [1], Ge-Se [2], and Sb-Se [3] have shown the formation of surface reliefs of various types depending on the charge deposited in a film. The recent studies of ternary chalcogenide systems based on Ge-As-Se have revealed unique electron-induced effects such as the electro-hydrodynamic instability c ○ B.V. BILANYCH, O. SHYLENKO, V.M.…”

Section: Introductionmentioning

confidence: 99%

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Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Bilanych¹,

Shylenko

Latyshev

et al. 2020

Ukr. J. Phys.

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The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Bilanych¹,

Shylenko

Latyshev

et al. 2020

Ukr. J. Phys.

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“…Over the years, several alloyed compositions of As-Ge containing chalcogenide glasses, such as As40Se10normalS40Ge10, 64 Ge4As4Se92, 74 Ge30As4normalS66, 75 Ge9As9Se82, and Ge16As24Se60, have been studied for electron beam patterning 76 . In addition, negative-tone electron beam patterning has also been shown among chalcogenide glass compositions comprising of Ge-Sb-Se, 77 P-Ge-Se, 78 and Sb-Se 79 , 80 . While thermal evaporation has been the popular method for deposition of chalcogenide films, pulsed laser deposition has also been explored for maintaining stoichiometry of the complex compositions 81 …”

Section: Metal-containing Resists In Electron Beam Lithography: An Ov...mentioning

confidence: 99%

“…76 In addition, negative-tone electron beam patterning has also been shown among chalcogenide glass compositions comprising of Ge-Sb-Se, 77 P-Ge-Se, 78 and Sb-Se. 79,80 While thermal evaporation has been the popular method for deposition of chalcogenide films, pulsed laser deposition has also been explored for maintaining stoichiometry of the complex compositions. 81 Several reports have exploited electron beam-induced metal-doping mechanism for negativetone patterning of chalcogenide resists, first reported by Yoshikawa et al 82 A thin Ag film was deposited on top of the Se 85 Ge 15 chalcogenide film by dipping into an aqueous AgNO 3 solution.…”

Section: Inorganic Resists Based On Chalcogenide Glassesmentioning

confidence: 99%

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Saifullah

Tiwale

Ganesan

2022

J. Micro/Nanopattern. Mats. Metro.

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Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions.Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old.Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning.Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

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Analysis of electron beam-induced effect on electrical switching properties of glass chalcogenide GeTe thin films through Raman spectroscopy

2015

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The interaction between electron beam and amorphous chalcogenide films

Cited by 9 publications

References 32 publications

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Analysis of electron beam-induced effect on electrical switching properties of glass chalcogenide GeTe thin films through Raman spectroscopy

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