Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Abstract

The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film.