Electron-beam induced surface relief shape inversion in amorphous Ge 4 As 4 Se 92 thin films

Bilanych, V. S.; Komanicky, Vladimir; Feher, A.; Кузьма, В. В.; Різак, В. М.

doi:10.1016/j.tsf.2014.10.067

Cited by 5 publications

(1 citation statement)

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“…These chalcogenide glass films have been since used for fabricating gratings and optical diffractive elements 72 , 73 . Over the years, several alloyed compositions of As-Ge containing chalcogenide glasses, such as As40Se10normalS40Ge10, 64 Ge4As4Se92, 74 Ge30As4normalS66, 75 Ge9As9Se82, and Ge16As24Se60, have been studied for electron beam patterning 76 . In addition, negative-tone electron beam patterning has also been shown among chalcogenide glass compositions comprising of Ge-Sb-Se, 77 P-Ge-Se, 78 and Sb-Se 79 , 80 .…”

Section: Metal-containing Resists In Electron Beam Lithography: An Ov...mentioning

confidence: 99%

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Saifullah

Tiwale

Ganesan

2022

J. Micro/Nanopattern. Mats. Metro.

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Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions.Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old.Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning.Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

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