Study of dependence of electron beam induced surface relief formation on Ge-As-Se thin films on the film elemental composition

Кузьма, В. В.; Bilanych, V. S.; Kozejova, Miroslava; Hložná, Dominika; Feher, A.; Різак, В. М.; Komanicky, Vladimir

doi:10.1016/j.jnoncrysol.2016.10.033

Cited by 10 publications

(9 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It can be seen that the approximation curves correlate quite well with the measurement results (points). It can be concluded there is exponential dependence of height of surface nanostructures that have been previously shown by researchers [5,6]. It should also be noted that exponential relaxation was observed during storage of films [4] and exponential decreasing of concentration of non-stoichiometric structural units during light exposure of chalcogenide films was observed in [23].…”

Section: Resultsmentioning

confidence: 55%

“…It can be seen that for G < 2400 mC•cm −2 the height of the surface relief gradually grows to 100-125 nm and for G > 2400 mC•cm −2 , relief height decreases. The changing of shape and parameters of the obtained surface relief on As3S77Ge20 film can be explained by the charge model, which was used earlier for the relief formation processes in Ge-As-Se chalcogenide films [5,6,11]. The formation of surface relief is due to structural changes in the film and the emergence of a space charge region (SCR) during the interaction of the film and the electron beam.…”

Section: Resultsmentioning

confidence: 95%

“…Numerous studies have concentrated on photoand thermally induced changes and imaging properties of As40S60-xSex layers (x = 0; 20; 30; 40; 60) with regard to their application for gratings fabrication [3][4][5][6] as well and other compositions of chalcogenide glasses. Usually surface relief is created after films exposure by respective light intensity pattern using selective etching.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Revutska¹,

Shylenko²,

Stronski³

et al. 2020

KPI SN

View full text Add to dashboard Cite

Background. Chalcogenide glasses comprise a unique materials platform and are attractive in view of various applications that make use their intriguing characteristic, the ability to form surface-relief patterns. The interaction of these materials with the electron beam is of interest due to diversity of physical phenomena induced in chalcogenide films by laser irradiation. Objective. The purpose of the paper is to study direct (without selective etching) surface relief formation of optical elements periodic nanostructures on thermal vacuum evaporated film As3S77Ge20 of ∼8.3 μm thickness using electron beam lithography, as well as investigate the changes in surface nanostructures height and shape depending on exposure. Methods. The chemical composition was determined by energy dispersive analysis of X-rays. The film was irradiated by an electron beam using a scanning electron microscope. The influence of electron beam irradiation on As3S77Ge20 amorphous chalcogenide thin film was investigated. Surface relief of the film was tapped by atomic force microscope. Results. The exposure dose G varied from 12 mC•cm −2 to 12 C•cm −2. The formation of cones with Gaussian profile on the surfaces of the films was detected after local electron irradiation. Exposition dependent evolution of height surface nanostructures has been detected. It can be seen that for G < 2400 mC•cm −2 the height of the surface relief gradually grows to 100-125 nm and for G > 2400 mC•cm −2 , relief height decreases. The initial and inversion doses of relief formation on this film have found. For 6,6 μm pitch is equal to G0 = 9,60 mC•cm-2 , and the inversion dose of the surface relief shape G1= 31.18 C•cm −2. At d = 10 μm, these parameters are G 0 = 6,98 mC•cm −2 and G1 = 36.19 C•cm −2. The dependences () h = F G at increasing interval (16 mC•cm −2-1200 mC•cm −2) for d = 6.6 μm and d = 10 μm were fitted by exponential function. Conclusions. The changing of shape and parameters of the obtained surface relief on As3S77Ge20 film can be explained by the charge model. Our investigations have demonstrated that studied As3S77Ge20 composition is suitable for e-beam recording. These results show that As3S77Ge20 films can be used for fabrication of the optical elements.

show abstract

Section: Resultsmentioning

confidence: 55%

Section: Resultsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Revutska¹,

Shylenko²,

Stronski³

et al. 2020

KPI SN

View full text Add to dashboard Cite

show abstract

“…Interestingly, various reliefs (lenses, cylinders, needles, hollows, etc.) can be obtained also by electron beam [49], thus, the nature of the energy source is not very essential for formation of the self-organizing patterns in glassy films.…”

Section: Photostructural Changes (Psc)mentioning

confidence: 99%

Photostructural Changes and Electrical Switching in Amorphous Chalcogenides: Bond Waves in Thin Films

Chechetkina¹

2018

View full text Add to dashboard Cite

Photostructural changes and electrical switching are the well-known features of amorphous chalcogenides, also known as glassy semiconductors. Although the both phenomena were intensively studied experimentally and have a wide practical application, their nature is debated up to now. I propose a new approach that considers glass as a self-organizing system owing to characteristic instability of chemical bonding in the form of bond wave. The bond wave model is shown to be suitable for explanation of the observed effects in thin films under the action of light or electrical field, a result that opens a new way for understanding and managing the processes in glassy semiconductors. on understating glass as a self-organizing system [6]. To be more concrete, the bond wave model is used for explanation of the known experiments and for planning of the new ones, emphasizing the usage of information fields to control underlying processes. 2. SELF-ORGANIZATION AND THE BOND WAVE MODEL 2.1. The Bond Wave Model This model stands on two supports: the theory of chemical bonding and the theory of self-organization. These two aspects are considered independently in glass community up to now. Chemical bonding is a

show abstract

“…BILANYCH, V.M. RIZAK, V. KOMANICKY, 2020 [4] or inversion of the shape of an electron-induced surface relief [5,6]. The binary As-Se systems have a very high sensitivity to the irradiation.…”

Section: Introductionmentioning

confidence: 99%

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Bilanych¹,

Shylenko

Latyshev

et al. 2020

Ukr. J. Phys.

Self Cite

View full text Add to dashboard Cite

The interaction of an electron beam with chalcogenide films As4Se96 has been studied. The kinetics of the formation of an electron-induced surface relief in the dose range 9,3 · 103–9,3 · 107 мC· cm−2 is established. The parameters of the interaction of a film As4Se96 with an electron beam are calculated. It is shown that the observed point of inversion of the shape of the electron-induced relief can be caused by the crossover of the surface potential. The process of manufacturing the image element by the single-step lithography is realized on the surface of an As4Se96 film.

show abstract

Study of dependence of electron beam induced surface relief formation on Ge-As-Se thin films on the film elemental composition

Cited by 10 publications

References 19 publications

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Photostructural Changes and Electrical Switching in Amorphous Chalcogenides: Bond Waves in Thin Films

Interaction of Chalcogenide As4Se96 Films with Electron Beam When Used as Electronic Resists

Contact Info

Product

Resources

About