Electron beam splitting at topological insulator surface states and a proposal for electronic Goos-Hänchen shift measurement

Ghadiri, Hassan; Saffarzadeh, Alireza

doi:10.1103/physrevb.105.085415

Cited by 9 publications

(9 citation statements)

References 75 publications

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“…In this special case, the GH shift is determined only by q-dependence of the transmission phase t x q arg ; ( ), as in [3] and [11]. If several transmitted beams coexist [19], one can calculate the GH shift for each of them from equation (20) where ψ O (x; q) should be the spinor of the corresponding right-propagating mode.…”

Section: Gh Shift Of Outgoing Beamsmentioning

confidence: 99%

“…The common wave nature of light and electrons makes it possible to manipulate electrons by means of components inspired by geometrical optics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. For ballistic electrons traversing a boundary separating two uniform regions with different potentials, reflection and refraction happen in analogy to a light beam incident on an interface between materials with different optical indices.…”

Section: Introductionmentioning

confidence: 99%

“…There are extensive studies on the GH shift of electrons in materials with an isotropic Fermi surface, especially in Dirac materials with linear dispersion. Very recently, Ghadiri and Saffarzadeh [19] have calculated the GH shift of transmitted electrons on the surface of a topological insulator with a potential barrier and a warped Fermi surface. Their derivation on the GH shift is made only for a special barrier orientation which is straightforward but cumbersome.…”

Section: Introductionmentioning

confidence: 99%

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Anisotropic and valley-resolved beam-splitter based on a tilted Dirac system

Zhou¹,

Zheng²,

Zhai³

2022

Commun. Theor. Phys.

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We investigate theoretically valley-resolved lateral shift of electrons traversing a n-p-n junction bulit on a typical tilted Dirac system (8-Pmmn borophene). A gauge-invariant formula on Goos-Hanchen (GH) shift of transmitted beams is derived, which holds for any anisotropic isoenergy surface. The tilt term brings valley dependence of relative position between isoenergy surface in n region and that in p region. Consequently, valley double refraction can occur at the n-p interface. The exiting positions of two valley-polarized beams depends on the incident angle and energy of incident beam and barrier parameters. Their spatial distance D can be enhanced to be ten to hundred times larger than the barrier width. Due to tilting-induced high anisotropy of isoenergy surface, D depends strongly on the barrier orientation. It is always zero when the junction is along the tilt direction of Dirac cones. Thus GH effect of transmitted beams in tilted Dirac systems can be utilized to design anisotropic and valley-resolved beam-splitter.

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Section: Gh Shift Of Outgoing Beamsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Anisotropic and valley-resolved beam-splitter based on a tilted Dirac system

Zhou¹,

Zheng²,

Zhai³

2022

Commun. Theor. Phys.

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“…Goos-Hänchen (GH) effect, a well known interference phenomenon in optics, describes the lateral shift of the reflected beam during total internal reflection at an interface [1]. The analogies between optics and electronics have recently inspired the studies of the GH effect in a variety of electronic systems [2][3][4][5], including 2D Dirac materials [6,7] like graphene [8], as well as a number of topological phases, such as topological semimetals [4,9] and axion insulators [10].…”

Section: Introductionmentioning

confidence: 99%

Quantum Goos-Hänchen switch in graphene junctions

Zhang,

Wang,

Wang

et al. 2023

New J. Phys.

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Goos-Hänchen (GH) shift, an interference phenomenon describing the lateral shift of the reflected beam along the interface during total internal reflection, has attracted great interests in the field of quantum transport in two-dimensional materials. In particular, the GH effect generates a novel pseudospin-dependent scattering effect in graphene, which in turn results in an 8 e 2 / h conductance step in the bipolar junctions. Here, we reveal that a barrier region with effective barrier strength χ can greatly enrich the GH effect in graphene junctions. In contrast to the conventional case where the negative shift is allowed only in the p-n junction, the thin barrier enables both negative and positive spatial shifts in pIn and nIn junctions, where I represents the barrier region. More interestingly, the lowest channel degeneracy can be efficiently varied by tuning χ in both the symmetric pInIp and the asymmetric pnIp junctions, leading to a highly controllable switch that switches the conductance between 8 e 2 / h and 4 e 2 / h . These results advance the knowledge of GH effects in electronic materials and suggest experimental avenues for its observation and manipulation.

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“…In microelectronic circuits, graphene photonic-like devices can be used to replace some logic gates to complete specific advantageous tasks such as matrix operations, thereby improving computational efficiency. Moreover, photonic-like transport behavior also exists in materials such as black phosphorus, topological insulator, carbon nanotubes, etc. These materials can also be used to make integrated photonic-like electron devices.…”

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confidence: 99%